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FUSB308B датащи(PDF) 20 Page - ON Semiconductor |
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FUSB308B датащи(HTML) 20 Page - ON Semiconductor |
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20 / 53 page ![]() FUSB308B www.onsemi.com 20 TYPE C SPECIFIC PARAMETERS (continued) TA = −40 to +855C TA = −40 to +1055C (Note 15) TJ = −40 to +1255C Symbol Unit Max Typ Min Parameter vRd−SRCdef Rd Detection Threshold for Source for Default Current (HOST_CUR1/0 = 01) 1.50 1.60 1.65 V vRd−SRC1.5A Rd Detection Threshold for Source for 1.5 A Current (HOST_CUR1/0 = 10) 1.50 1.60 1.65 V vRd−SRC3A Rd Detection Threshold for Source for 3 A Current (HOST_CUR1/0 = 11) 2.45 2.60 2.75 V vRa−SNK Ra Detection Threshold for CC Pin for Sink 0.15 0.20 0.25 V vRd−def Rd Default Current Detection Threshold for Sink 0.61 0.66 0.70 V vRd−1.5A Rd 1.5 A Current Detection Threshold for Sink 1.16 1.23 1.31 V vRd−3.0A Rd 3 A Current Detection Threshold for Sink 2.04 2.11 2.18 V zOPEN CC resistance for disabled state, ROLECTRL = 0Fh 126 kΩ vVCONNthr Valid VCONN Voltage Assumes PWRCTRL.EN_VCONN = 1b 2.4 V tTCPCfilter Debounce time on CC lines to prevent CCSTAT change in case of minor changes in voltage on CC because of noise 4 500 μs tCCDebounce Debounce Time for CC Attach Detection 100 150 200 ms tSetReg Time between CC status change and I2C registers updated 50 μs tTCPCSampleRate CC Sample rate for indicating changes on CC lines 1 ms tDRP Sum of tToggleSrc and tToggleSnk timers 50 100 ms tToggleSrc Time Spent in Apply Rp before transitioning to Apply Rd DRPTOGGLE = 00 15 30 ms DRPTOGGLE = 01 20 40 ms DRPTOGGLE = 10 25 50 ms DRPTOGGLE = 11 30 60 ms tToggleSnk Time Spent in Apply Rd before transitioning to Apply Rp DRPTOGGLE = 00 35 70 ms DRPTOGGLE = 01 30 60 ms DRPTOGGLE = 10 25 50 ms DRPTOGGLE = 11 20 40 ms 12.RDEVICE minimum and maximum specifications are only guaranteed when power is applied. VBUS MEASUREMENT CHARACTERISTICS Symbol Parameter TA = −40 to +855C TA = −40 to +1055C (Note 15) TJ = −40 to +1255C Unit Min Typ Max vMDACstepVBUS VBUS Measure block LSB reported on VBUS_VOLTAGE[9:0] register 25 mV pMDACVBUS Accuracy of VBUS Voltage Measurement TA = −40 to +85°C ±2 % TA = +85 to +105°C (Note 12) ±5 % tVBUSsample Sampling period of VBUS Measurement 3 ms vVBUSthr VBUS threshold at which VBUS_VAL interrupt is triggered. Assumes VBUS present detection is enabled 3.5 4.05 V vVBUShys Hysteresis on VBUS Comparator 50 mV |
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