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FUSB308B датащи(PDF) 18 Page - ON Semiconductor |
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FUSB308B датащи(HTML) 18 Page - ON Semiconductor |
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18 / 53 page ![]() FUSB308B www.onsemi.com 18 DC and Transient Characteristics Unless otherwise specified: Recommended TA and TJ temperature ranges. All typical values are at TA = 25°C and VDD = 3.3 V unless otherwise specified. CURRENT CONSUMPTION Symbol Parameter TA = −40 to +855C TA = −40 to +1055C (Note 15) TJ = −40 to +1255C Unit Min Typ Max IDISABLE Disable Current (ROLECTRL = 0x0F) 10 μA Unattached DRP or Source 7 20 μA Attached as Source (No PD) 12 22 μA BASEBAND PD Symbol Parameter TA = −40 to +855C TA = −40 to +1055C (Note 15) TJ = −40 to +1255C Unit Min Typ Max UI Unit Interval 3.03 3.33 3.70 μs TRANSMITTER zDriver TX output impedance at 750 kHz with an external 220 pF or equivalent load 33 75 Ω tEndDriveBMC Time to cease driving the line after the end of the last bit of the Frame 2 UI tHoldLowBMC Time to cease driving the line after the final high−to−low transition 1 μs tStartDrive Time before the start of the first bit of the preamble when the transmitter shall start driving the line −1 1 μs tBISTContMode Time a BIST Carrier Mode 2 transmission is performed 30 60 ms tBUFFER2CC Time from I2C Stop from writing to TRANSMIT register to first bit of Preamble transmitted 195 μs tR Rise Time 300 ns tF Fall Time 300 ns RECEIVER CReceiver (Note 11) Receiver capacitance when driver isn’t turned on 25 pF zBmcRx Receiver Input Impedance 1 MΩ tCC2BUFFER Time between last bit of EOP to I_RXSTAT 50 μs tRxFilter Rx bandwidth limiting filter (Note 11) 100 ns nTransitionCount Transitions count in a time window of 20 μs max 3 Edges tTransitionWindow Time window for detecting non−idle 12 20 μs 11. Guaranteed by characterization and/or design. Not production tested. |
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