IP4856CX25_C

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Product data sheet

Rev. 2 — 15 October 2014

13 of 21

NXP Semiconductors

IP4856CX25/C

SD 3.0-compliant memory card integrated dual voltage level translator

12.3 ESD characteristic of pin write protect and card detect

[1]

averaging window = 50 ns to 80 ns.

Fig 7.

Output delay timing

Table 13.

ESD characteristic of write protect and card detect

GND (ground = 0 V); unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ESD protection pins: WP and CD

breakdown voltage

TLP; I = 1 mA

-

8

-

V

dynamic resistance

positive transient

-



negative transient

-

