IP4856CX25_C

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© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 2 — 15 October 2014

8 of 21

NXP Semiconductors

IP4856CX25/C

SD 3.0-compliant memory card integrated dual voltage level translator

9.

Limiting values

[1]

10. Recommended operating conditions

[1]

supply voltage.

[2]

The voltage must not exceed 3.6 V.

Table 7.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

4 ms transient

0.5

+4.6

V

0.5

+4.6

V

input voltage

4 ms transient at I/O pins

0.5

+4.6

V

total power dissipation

-

1000

mW

storage temperature

55

+150

C

ambient temperature

40

+85

C

electrostatic discharge

voltage

IEC 61000-4-2, level 4, all memory card-side pins,

[1]

contact discharge

8+8

kV

air discharge

15

+15

kV

Human Body Model (HBM)

JEDEC JESD22-A114F; all pins

2000 +2000 V

Machine Model (MM) JEDEC JESD22-A115;

all pins

200

+200

V

input/output latch-up current JESD78B:

0.5  V

100

+100

mA

Table 8.

Operating conditions

Symbol Parameter

Conditions

Min

Typ

Max

Unit

supply voltage

-

3.6

V

1.7

-

V

input voltage

host side

[2]

0.3

-

V

memory card side

0.3

-

V

external

capacitance

-1.0

-

F

ESR

equivalent series

resistance

0-

50

m



external

capacitance

-0.1

-

F

-0.1

-

F