IP4856CX25_C

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© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 2 — 15 October 2014

9 of 21

NXP Semiconductors

IP4856CX25/C

SD 3.0-compliant memory card integrated dual voltage level translator

[1]

Guaranteed by design and characterization.

11. Static characteristics

Table 9.

Integrated resistors

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

pull-down resistance

R7

272

470

668

k



R30

70

100

130



R20; R21; R38

200

350

500

k



pull-up resistance

R10

10.5

15

19.5

k



R11 to R13

49

70

91

k



R14 and R15

70

100

130

k



series resistance

card side; R1 to R6

15

18



host side; R31 to R37

22.5

27



Table 10.

Static characteristics

Symbol Parameter

Conditions

Min

Max

Unit

regulator output

voltage

2.7

2.9

3.3

V

 0.15

+ 0.15

V

1.7

1.85

2.0

V

regulator dropout

voltage

-

-

150

mV

regulator output

current

-

-

100

mA

Host-side input signals: CMD_H, DATA0_H to DATA3_H and CLK_IN

HIGH-level input

voltage

0.625



0.3

V

LOW-level input

voltage

0.3

-

0.35



V

input leakage current

1.0

nA

Host-side control signals

SEL, ENABLE, DIR_0, DIR_1_3 and DIR_CMD

HIGH-level input

voltage

0.625



0.3

V

LOW-level input

voltage

0.3

-

0.35



V

HIGH-level input

voltage

1.5

-

3.63

V

LOW-level input

voltage

0.3

-

+1.0

V