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STLC1510 датащи(PDF) 23 Page - STMicroelectronics

номер детали STLC1510
подробное описание детали  NorthenLite G.lite DMT Transceiver
PDF  40 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STLC1510 датащи(HTML) 23 Page - STMicroelectronics

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STLC1510
5.12 Processor Emulation
There are three programmable processors on the
LAVA ASIC: an ARM microprocessor, a D950 Digital
Signal Processor, and a custom DSP engine (BPU).
All these are capable of JTAG based emulation with
the following attributes:
s
Stop on breakpoint.
s
Single step
s
Full register R/W.
s
Program modification and resume.
6.0 ELECTRICAL CHARACTERISTICS
This device shall meet the functional requirements
detailed herein when operated over the specified tim-
ing, electrical, and temperature range.
7.0 OPERATING RANGES
The operating ranges shall be in accordance with the
following table.
7.1 DC Characteristics
The following table identifies the general DC charac-
teristics for input and output pins.
Table 7. Operating Ranges
SYMBOL
PARAMETER
MIN.
NOM.
MAX.
UNITS
VDD3_3
CMOS 3.3v I/O Supply voltage
3.0
3.3
3.6
V
VDD2_5
CMOS 2.5v Core Supply voltage
2.25
2.5
2.75
V
IDD3
CMOS 3.3v I/O Supply current
11
mA
IDDS3
CMOS 3.3v I/O Static supply current
TBD
mA
IDD2
CMOS 2.5v Core Supply current
240
mA
IDDS2
CMOS 2.5v Core Static supply current
TBD
mA
TA
Ambient temperature under bias1
-40
25
85
×C
TJ
Operating junction temperature
-40
25
105
×C
<1>
Assuming no air flow and a package thermal resistance of 30
×C/watt
Table 8. General Interface Electrical Characteristics
SYMBOL
PARAMETER
Conditio ns
Min
Typ
Max
Unit
Vil
Low level i/p voltage
0.8
V
Vih
High level i/p voltage
2.0
V
Vol
Low level o/p voltage1
Iol = 2mA
0.4
V
Voh
High level o/p voltagea
Ioh = 2mA
2.4
V
Iil
Low Level Input Current without pull-up
device2
Vi=0V
1.0
µA
Iih
High Level Input Current without pull-
down deviceb
Vi=VD3_3
Vi=VDD5
2.0
4.0
µA
µA
Ioz
Tri-state Output leakage without pull
up/down deviceb
Vo=0V or
VDD3_3
1.0
µA
Ipu
Pullup current
Vi = 0V
-50
µA
Ipd
Pulldown current
Vi = VDD5
100
µA
Rup
Equivalent pull-up resistance
Vi =0V
50
k
Rpd
Equivalent pull-down resistance
Vi = VDD2_5
50
k
<1>
Takes into account 0.075*Vdd voltage drop in both supply lines.
<2>
The leakage currents are generally very small, < 1nA. The value given here, i
µA, is a maximum that can occur after an Electrostatic
Stress on the pin.



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