 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
TPS65982ABZBHR датащи(PDF) 19 Page - Texas Instruments |
|
|
|
|||||||||||||||||||||||||||||
TPS65982ABZBHR датащи(HTML) 19 Page - Texas Instruments |
|
|
19 / 121 page  19 TPS65982 www.ti.com SLVSD02D – MARCH 2015 – REVISED JUNE 2019 Product Folder Links: TPS65982 Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated (1) All RON specified maximums are the maximum of either of the switches in a pair. All ROND specified maximums are the maximum difference between the two switches in a pair. ROND does not add to RON. 7.12 Port Data Multiplexer Switching Characteristics Recommended operating conditions; TA = –10 to 85°C unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SWD MULTIPLEXER PATH(1) SWD_RON_U On resistance of SWD_DATA/CLK to C_USB_TP/TN/BP/BN Vi = 3.3 V, IO = 20 mA 35 55 Ω Vi = 1 V, IO = 20 mA 30 46 SWD_ROND_U On resistance difference between P and N paths of SWD_DATA/CLK to C_USB_ TP/TN/BP/BN Vi = 1 V to 3.3 V, IO = 20 mA –2.5 2.5 Ω SWD_RON_S On resistance of SWD_DATA/CLK to C_SBU1/2 Vi = 3.3 V, IO = 20 mA 26 42 Ω Vi = = 1 V, IO = 20 mA 24 37 SWD_ROND_S On resistance difference between P and N paths of SWD_DATA/CLK to C_SBU1/2 Vi = 1V to 3.3 V, IO = 20 mA –1.5 1.5 Ω SWD_TON Switch on time from enable of SWD path Time from enable bit with charge pump off 150 μs Time from enable bit at charge pump steady state 10 SWD_TOFF Switch off time from disable of SWD path Time from disable bit at charge pump steady state 500 ns SWD_BW 3 dB bandwidth of SWD path CL = 10 pF 200 MHz DEBUG1/2 MULTIPLEXER PATH(1) DB1_RON_U On resistance DEBUG1/2 to C_USB_TP/TN/BP/BN Vi = 3.3 V, IO = 20 mA 14 26 Ω Vi = 1 V, IO = 20 mA 10 17 DB1_ROND_U On resistance difference between P and N paths of DEBUG1/2 to C_USB_TP/TN/BP/BN Vi = 1 V to 3.3 V, IO = 20 mA –2.5 2.5 Ω DB1_RON_S On resistance of DEBUG1/2 to C_SBU1/2 Vi = 3.3 V, IO = 20 mA 9.5 17 Ω Vi = 1 V, IO = 20 mA 6.5 12 DB1_ROND_S On resistance difference between P and N paths of Debug path DEBUG1/2 to C_SBU1/2 Vi = 1 V to 3.3 V, IO = 20 mA –0.5 0.5 Ω DB1_TON Switch on time from enable of DEBUG path Time from enable bit with charge pump off 150 μs Time from enable bit at charge pump steady state 10 DB1_TOFF Switch off time from disable of DEBUG path Time from disable bit at charge pump steady state 500 ns DB1_BW 3dB bandwidth of DEBUG path CL = 10 pF 200 MHz DEBUG3/4 MULTIPLEXER PATH(1) DB3_RON_U On resistance of DEBUG3/4 to C_USB_TP/TN/BP/BN Vi = 3.3 V, IO = 20 mA 14 24 Ω Vi = 1 V, IO = 20 mA 9 17 DB3_ROND_U On resistance difference between P and N paths of DEBUG3/4 to C_USB_ TP/TN/BP/BN Vi = 1 V to 3.3V, IO = 20 mA –1.5 1.5 Ω DB3_RON_S On resistance of DEBUG3/4 to C_SBU1/2 Vi = 3.3 V, IO = 20 mA 9.5 18 Ω Vi = 1 V, IO = 20 mA 6.5 12 DB3_ROND_S On resistance difference between P and N paths of DEBUG3/4 to C_SBU1/2 Vi = 1 V to 3.3 V, IO = 20 mA –0.15 0.15 Ω DB3_TON Switch on time from enable of DEBUG3/4 path Time from enable bit with charge pump off 150 μs Time from enable bit at charge pump steady state 10 DB3_TOFF Switch off time from disable of DEBUG3/4 path Time from disable bit at charge pump steady state 500 ns DB3_BW 3dB bandwidth of DEBUG3/4 path CL = 10 pF 200 MHz |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
