HT45F2020 datasheet(18/85 Pages) HOLTEK

18 / 85 page

Rev. 1.00

April 11, 2017

Rev. 1.00

April 11, 2017

HT45F2020/HT45F2022

Sound Effect Generator Flash MCU

HT45F2020/HT45F2022

Sound Effect Generator Flash MCU

On-Chip Debug Support – OCDS

ThereareEVchipsnamedHT45V2020andHT45V2022,whichareusedtoemulatetheHT45F2020

andHT45F2022devices.TheEVchipdeviceprovidesan“On-ChipDebug”functiontodebug

thecorrespondingMCUdeviceduringthedevelopmentprocess.TheEVchipandtheactualMCU

devicearealmostfunctionallycompatibleexceptforthe“On-ChipDebug”function.Userscan

usetheEVchipdevicetoemulatetherealchipdevicebehaviorbyconnectingtheOCDSDAand

OCDSCKpinstotheHoltekHT-IDEdevelopmenttools.TheOCDSDApinistheOCDSData/

Addressinput/outputpinwhiletheOCDSCKpinistheOCDSclockinputpin.Whenusersusethe

EVchipfordebugging,otherfunctionswhicharesharedwiththeOCDSDAandOCDSCKpinsin

theactualMCUdevicewillhavenoeffectintheEVchip.However,thetwoOCDSpinswhichare

pin-sharedwiththeICPprogrammingpinsarestillusedastheFlashMemoryprogrammingpinsfor

ICP.ForamoredetailedOCDSdescription,refertothecorrespondingdocumentnamed“Holtek

e-Linkfor8-bitMCUOCDSUser’sGuide”.

Holtek e-Link Pins

EV Chip Pins

Pin Description

OCDSDA

On-chip Debug Support Data/Address input/output

OCDSCK

On-chip Debug Support Clock input

VDD

Power Supply

VSS

Ground

Data Memory

TheDataMemoryisavolatileareaof8-bitwideRAMinternalmemoryandisthelocationwhere

temporaryinformationisstored.

Structure

Dividedintotwotypes,thefirstoftheseisanareaofRAM,knownastheSpecialFunctionData

Memory.Herearelocatedregisterswhicharenecessaryforcorrectoperationofthedevice.Many

oftheseregisterscanbereadfromandwrittentodirectlyunderprogramcontrol,however,some

remainprotectedfromusermanipulation.ThesecondareaofDataMemoryisknownastheGeneral

PurposeDataMemory,whichisreservedforgeneralpurposeuse.Alllocationswithinthisarea

arereadandwriteaccessibleunderprogramcontrol.ThestartaddressoftheDataMemoryforall

devicesistheaddress00H.

General Purpose Data Memory

Allmicrocontrollerprogramsrequireanareaofread/writememorywheretemporarydatacanbe

storedandretrievedforuselater.ItisthisareaofRAMmemorythatisknownasGeneralPurpose

DataMemory.ThisareaofDataMemoryisfullyaccessiblebytheuserprogramingforbothreading

andwritingoperations.Byusingthebitoperationinstructionsindividualbitscanbesetorresetunder

programcontrolgivingtheuseralargerangeofflexibilityforbitmanipulationintheDataMemory.

Capacity

Location

32×8

Bank 0: 40H~5FH

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