STM32F410RB datasheet(89/142 Pages) STMICROELECTRONICS

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STM32F410x8/B

Electrical characteristics

118

6.3.13

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 51. They are based on the EMS levels and classes

defined in application note AN1709.

1. Guaranteed by design.

2. The maximum programming time is measured after 100K erase operations.

3. VPP should only be connected during programming/erasing.

Table 49. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

NEND

Endurance

TA = - 40 to +85 °C (6 suffix versions)

TA = - 40 to +105 °C (7 suffix versions)

TA = - 40 to +125 °C (3 suffix versions)

Kcycle

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycle(2) at TA = 55 °C

1. Guaranteed by characterization.

2. Cycling performed over the whole temperature range.

Table 50. EMS characteristics

Symbol

Parameter

Conditions

Level/

Class

VFESD

Voltage limits to be applied on any I/O pin

to induce a functional disturbance

VDD = 3.3 V, LQFP64, TA = +25 °C,

fHCLK = 100 MHz, conforms to

IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD = 3.3 V, LQFP64, TA = +25 °C,

fHCLK = 100 MHz, conforms to

IEC 61000-4-4

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