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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F410RB датащи(PDF) 84 Page - STMicroelectronics |
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STM32F410RB датащи(HTML) 84 Page - STMicroelectronics |
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84 / 142 page  Electrical characteristics STM32F410x8/B 84/142 DocID028094 Rev 5 Low-speed internal (LSI) RC oscillator Figure 24. ACCLSI versus temperature 6.3.10 PLL characteristics The parameters given in Table 44 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 15. Table 43. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 125 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Guaranteed by characterization. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA Table 44. Main PLL characteristics Symbol Parameter Conditions Min Typ Max Unit fPLL_IN PLL input clock(1) -0.95(2) 12.10 MHz fPLL_OUT PLL multiplier output clock - 24 - 100 MHz fPLL48_OUT 48 MHz PLL multiplier output clock - - 48 75 MHz fVCO_OUT PLL VCO output - 100 - 432 MHz |
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