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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F410RB датащи(PDF) 87 Page - STMicroelectronics |
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STM32F410RB датащи(HTML) 87 Page - STMicroelectronics |
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87 / 142 page  DocID028094 Rev 5 87/142 STM32F410x8/B Electrical characteristics 118 Figure 25 and Figure 26 show the main PLL output clock waveforms in center spread and down spread modes, where: F0 is fPLL_OUT nominal. Tmode is the modulation period. md is the modulation depth. Figure 25. PLL output clock waveforms in center spread mode Figure 26. PLL output clock waveforms in down spread mode 6.3.12 Memory characteristics Flash memory The characteristics are given at TA = –40 to 125 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Table 46. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode, VDD = 1.7 V - 5 - mA Write / Erase 16-bit mode, VDD = 2.1 V - 8 - Write / Erase 32-bit mode, VDD = 3.3 V - 12 - |
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