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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F410RB датащи(PDF) 83 Page - STMicroelectronics |
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STM32F410RB датащи(HTML) 83 Page - STMicroelectronics |
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83 / 142 page  DocID028094 Rev 5 83/142 STM32F410x8/B Electrical characteristics 118 6.3.9 Internal clock source characteristics The parameters given in Table 42 and Table 43 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 15. High-speed internal (HSI) RC oscillator L Figure 23. ACCHSI versus temperature 1. Guaranteed by characterization. Table 42. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 125 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Guaranteed by design. -- 1 % Factory- calibrated TA = –40 to 125 °C(3) 3. Guaranteed by characterization. –8 - 5.5 % TA = –10 to 85 °C(3) –4 - 4 % TA = 25 °C(4) 4. Factory calibrated non-soldered parts. –1 - 1 % tsu(HSI)(2) HSI oscillator startup time -- 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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