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DP8430V датащи(PDF) 11 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали DP8430V
подробное описание детали  microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers
PDF  56 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

DP8430V датащи(HTML) 11 Page - National Semiconductor (TI)

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30 Programming and Resetting (Continued)
33 PROGRAMMING BIT DEFINITIONS
(Continued)
Symbol
Description
R5 R4
WAIT DTACK during Burst (See Section 512 or 522)
0 0
NO WAIT STATES If R7 e 0 during programming WAIT will remain negated during burst portion of access
If R7 e 1 programming DTACK will remain asserted during burst portion of access
0 1
1T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated with AREQ asserted
WAIT will negate from the positive edge of CLK after the ECASs have been asserted
If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated with AREQ asserted
DTACK will assert from the positive edge of CLK after the ECASs have been asserted
1 0
T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated with AREQ asserted
WAIT will negate on the negative level of CLK after the ECASs have been asserted
If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated with AREQ asserted
DTACK will assert from the negative level of CLK after the ECASs have been asserted
1 1
0T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated WAIT will negate when
the ECAS inputs are asserted
If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated DTACK will assert when
the ECAS inputs are asserted
R3 R2
WAIT DTACK Delay Times (See Section 511 or 521)
0 0
NO WAIT STATES If R7 e 0 during programming WAIT will remain high during non-delayed accesses WAIT
will negate when RAS is negated during delayed accesses
NO WAIT STATES If R7 e 1 during programming DTACK will be asserted when RAS is asserted
0 1
T If R7 e 0 during programming WAIT will negate on the negative level of CLK after the access RAS
1T If R7 e 1 during programming DTACK will be asserted on the positive edge of CLK after the access RAS
1 0
NO WAIT STATES
T If R7 e 0 during programming WAIT will remain high during non-delayed accesses
WAIT will negate on the negative level of CLK after the access RAS during delayed accesses
T If R7 e 1 during programming DTACK will be asserted on the negative level of CLK after the access RAS
1 1
1T If R7 e 0 during programming WAIT will negate on the positive edge of CLK after the access RAS
1
T If R7 e 1 during programming DTACK will be asserted on the negative level of CLK after the positive edge
of CLK after the access RAS
R1 R0
RAS Low and RAS Precharge Time
0 0
RAS asserted during refresh e 2 positive edges of CLK
RAS precharge time e 1 positive edge of CLK
RAS will start from the first positive edge of CLK after GRANTB transitions (DP8432V)
0 1
RAS asserted during refresh e 3 positive edges of CLK
RAS precharge time e 2 positive edges of CLK
RAS will start from the second positive edge of CLK after GRANTB transitions (DP8432V)
1 0
RAS asserted during refresh e 2 positive edges of CLK
RAS precharge time e 2 positive edges of CLK
RAS will start from the first positive edge of CLK after GRANTB transitions (DP8432V)
1 1
RAS asserted during refresh e 4 positive edges of CLK
RAS precharge time e 3 positive edges of CLK
RAS will start from the second positive edge of CLK after GRANTB transitions (DP8432V)
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