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VMV3 датащи(PDF) 128 Page - Microsemi Corporation

номер детали VMV3
подробное описание детали  Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology
PDF  212 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VMV3 датащи(HTML) 128 Page - Microsemi Corporation

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Military ProASIC3/EL DC and Switching Characteristics
2-114
Revision 3
Timing Characteristics
Table 2-188 • Combinatorial Cell Propagation Delays
Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.14 V for A3PE600L and
A3PE3000L
Combinatorial Cell
Equation
Parameter
–1
Std.
Units
INV
Y = !A
tPD
0.56
0.65
ns
AND2
Y = A · B
tPD
0.65
0.77
ns
NAND2
Y = !(A · B)
tPD
0.65
0.77
ns
OR2
Y = A + B
tPD
0.67
0.79
ns
NOR2
Y = !(A + B)
tPD
0.67
0.79
ns
XOR2
Y = A
Bt
PD
1.02
1.20
ns
MAJ3
Y = MAJ(A , B, C)
tPD
0.97
1.14
ns
XOR3
Y = A
B Ct
PD
1.21
1.42
ns
MUX2
Y = A !S + B S
tPD
0.70
0.82
ns
AND3
Y = A · B · C
tPD
0.78
0.91
ns
Note:
For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating
values.
Table 2-189 • Combinatorial Cell Propagation Delays
Military-Case Conditions: TJ = 125°C, VCC = 1.425 V for any A3PE600L/A3PE3000L
Combinatorial Cell
Equation
Parameter
–1
Std.
Units
INV
Y = !A
tPD
0.43
0.50
ns
AND2
Y = A · B
tPD
0.50
0.59
ns
NAND2
Y = !(A · B)
tPD
0.50
0.59
ns
OR2
Y = A + B
tPD
0.51
0.61
ns
NOR2
Y = !(A + B)
tPD
0.51
0.61
ns
XOR2
Y = A
Bt
PD
0.78
0.92
ns
MAJ3
Y = MAJ(A , B, C)
tPD
0.74
0.87
ns
XOR3
Y = A
B Ct
PD
0.93
1.09
ns
MUX2
Y = A !S + B S
tPD
0.54
0.63
ns
AND3
Y = A · B · C
tPD
0.59
0.70
ns
Note:
For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating
values.



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