VMV3 datasheet(60/212 Pages) MICROSEMI

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Military ProASIC3/EL DC and Switching Characteristics

2-46

Revision 3

Table 2-59 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard Plus I/O Banks

3.3 V

LVCMOS

Wide Range

Equiv.

Software

Default

Drive

Strength

Option1

VIL

VIH

VOL

VOH

IOL IOH

IOSL

IOSH

IIL2 IIH3

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VµA µA

Max.

mA4

Max.

mA4

µA

100 µA

2 mA

–0.3

0.8

3.6

0.2

VCCI – 0.2 100 100

15 15

100 µA

4 mA

–0.3

0.8

3.6

0.2

VCCI – 0.2 100 100

15 15

100 µA

6 mA

–0.3

0.8

3.6

0.2

VCCI – 0.2 100 100

15 15

100 µA

8 mA

–0.3

0.8

3.6

0.2

VCCI – 0.2 100 100

15 15

100 µA

12 mA

–0.3

0.8

3.6

0.2

VCCI – 0.2 100 100

103

109

15 15

100 µA

16 mA

–0.3

0.8

3.6

0.2

VCCI – 0.2 100 100

132

127

15 15

Notes:

1. Note that 3.3 V LVCMOS wide range is applicable to 100 µA drive strength only. The configuration will not operate at the

equivalent software default drive strength. These values are for normal ranges only.

2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

4. Currents are measured at 125°C junction temperature.

5. All LVMCOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-A specification.

6. Software default selection highlighted in gray.

Figure 2-9 • AC Loading

Table 2-60 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V)

Input High (V)

Measuring Point* (V)

VREF (Typ) (V)

CLOAD (pF)

03.3

1.4

–

Note:

*Measuring point = Vtrip. See Table 2-28 on page 2-27 for a complete table of trip points.

Test Point

Enable Path

Datapath

5 pF

R = 1 k

R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

5 pF for tZH / tZHS / tZL / tZLS

5 pF for tHZ / tLZ

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