VMV3 datasheet(46/212 Pages) MICROSEMI

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Military ProASIC3/EL DC and Switching Characteristics

2-32

Revision 3

Table 2-35 • I/O Output Buffer Maximum Resistances 1

Applicable to Pro I/Os for A3PE600L and A3PE3000L Only

Standard

Drive Strength

RPULL-DOWN () 2

RPULL-UP () 3

3.3 V LVTTL / 3.3 V LVCMOS

4 mA

100

300

8 mA

150

12 mA

16 mA

24 mA

3.3 V LVCMOS Wide Range

100 µA

Same as regular 3.3 V LVCMOS

2.5 V LVCMOS

4 mA

100

200

8 mA

100

12 mA

16 mA

24 mA

1.8 V LVCMOS

2 mA

200

225

4 mA

100

112

6 mA

8 mA

12 mA

16 mA

1.5 V LVCMOS

2 mA

200

224

4 mA

100

112

6 mA

8 mA

12 mA

1.2 V LVCMOS4

2 mA

158

1.2 V LVCMOS Wide Range4

100 µA

158

3.3 V PCI/PCI-X

Per PCI/PCI-X specification

3.3 V GTL

20 mA5

–

2.5 V GTL

20 mA5

–

3.3 V GTL+

35 mA

–

2.5 V GTL+

33 mA

–

HSTL (I)

8 mA

HSTL (II)

15 mA5

SSTL2 (I)

15 mA

SSTL2 (II)

18 mA

SSTL3 (I)

14 mA

SSTL3 (II)

21 mA

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located at http://www.actel.com/download/ibis/default.aspx.

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec.

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec.

4. Applicable to A3PE600L and A3PE3000L devices operating in the 1.2 V core range only.

5. Output drive strength is below JEDEC specification.

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