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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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VMV3 датащи(PDF) 52 Page - Microsemi Corporation |
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VMV3 датащи(HTML) 52 Page - Microsemi Corporation |
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52 / 212 page  Military ProASIC3/EL DC and Switching Characteristics 2-38 Revision 3 For example, at 110°C, the short current condition would have to be sustained for more than three months to cause a reliability concern. The I/O design does not contain any short circuit protection, but such protection would only be needed in extremely prolonged stress conditions. Table 2-43 • Duration of Short Circuit Event before Failure Temperature Time before Failure –50ºC > 20 years –40°C > 20 years 0°C > 20 years 25°C > 20 years 70°C 5 years 85°C 2 years 100°C 6 months 110°C 3 months 125°C 1 month Table 2-44 • I/O Input Rise Time, Fall Time, and Related I/O Reliability Input Buffer Input Rise/Fall Time (min.) Input Rise/Fall Time (max.) Reliability LVTTL/LVCMOS No requirement 10 ns * 20 years (110°C) LVDS/B-LVDS/ M-LVDS/LVPECL No requirement 10 ns * 10 years (100°C) Note: *The maximum input rise/fall time is related to the noise induced in the input buffer trace. If the noise is low, the rise time and fall time of input buffers can be increased beyond the maximum value. The longer the rise/fall times, the more susceptible the input signal is to the board noise. Microsemi recommends signal integrity evaluation/characterization of the system to ensure that there is no excessive noise coupling into input signals. |
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