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VMV3 датащи(PDF) 34 Page - Microsemi Corporation

номер детали VMV3
подробное описание детали  Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology
PDF  212 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VMV3 датащи(HTML) 34 Page - Microsemi Corporation

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Military ProASIC3/EL DC and Switching Characteristics
2-20
Revision 3
User I/O Characteristics
Timing Model
Figure 2-4 • Timing Model
Operating Conditions: –1 Speed, Military Temperature Range (TJ = 125°C), Worst-Case
VCC = 1.14 V (example for A3PE3000L and A3PE600L)
DQ
Y
Y
DQ
DQ
DQ
Y
Combinational Cell
Combinational Cell
Combinational Cell
I/O Module
(Registered)
I/O Module
(Non-Registered)
Register Cell
Register Cell
I/O Module
(Registered)
I/O Module
(Non-Registered)
LVPECL
LVPECL
LVDS,
B-LVDS,
M-LVDS
LVTTL 3.3 V Output Drive
Strength = 12 mA
High Slew Rate
Y
Combinational Cell
Y
Combinational Cell
Y
Combinational Cell
I/O Module
(Non-Registered)
LVTTL Output Drive Strength = 8 mA
High Slew Rate
I/O Module
(Non-Registered)
LVCMOS 1.5 V Output Drive Strength = 4 mA
High Slew Rate
LVTTL Output Drive Strength = 12 mA
High Slew Rate
I/O Module
(Non-Registered)
Input LVTTL
Clock
Input LVTTL
Clock
Input LVTTL
Clock
tPD = 0.78 ns
tPD = 0.67 ns
tDP = 1.51 ns
tPD = 1.21 ns
tDP = 2.09 ns
tPD = 0.70 ns
tDP = 2.38 ns
tPD = 0.65 ns
tDP = 2.84 ns
tPD = 0.65 ns
tPY = 1.49 ns
tCLKQ = 0.76 ns
tOCLKQ = 0.81 ns
tSUD = 0.9 ns
tOSUD = 0.43 ns
tDP = 2.09 ns
tPY = 1.49 ns
tPY = 2.11 ns
tCLKQ = 0.76 ns
tSUD = 0.59 ns
tPY = 1.49 ns
tICLKQ = 0.33 ns
tISUD = 0.36 ns
tPY = 1.84 ns



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