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VMV3 датащи(PDF) 70 Page - Microsemi Corporation |
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VMV3 датащи(HTML) 70 Page - Microsemi Corporation |
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70 / 212 page ![]() Military ProASIC3/EL DC and Switching Characteristics 2-56 Revision 3 Table 2-79 • 2.5 V LVCMOS Low Slew Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Standard Plus I/O Banks Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 4 mA Std. 0.63 6.45 0.05 1.43 0.45 6.56 5.71 2.48 2.19 9.02 8.17 ns –1 0.54 5.48 0.04 1.21 0.39 5.58 4.86 2.11 1.86 7.68 6.95 ns 6 mA Std. 0.63 5.28 0.05 1.43 0.45 5.38 4.92 2.85 2.88 7.84 7.38 ns –1 0.54 4.50 0.04 1.21 0.39 4.58 4.19 2.42 2.45 6.67 6.28 ns 8 mA Std. 0.63 5.28 0.05 1.43 0.45 5.38 4.92 2.85 2.88 7.84 7.38 ns –1 0.54 4.50 0.04 1.21 0.39 4.58 4.19 2.42 2.45 6.67 6.28 ns 12 mA Std. 0.63 4.48 0.05 1.43 0.45 4.56 4.35 3.11 3.31 7.02 6.81 ns –1 0.54 3.81 0.04 1.21 0.39 3.88 3.70 2.65 2.82 5.97 5.79 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating values. Table 2-80 • 2.5 V LVCMOS High Slew Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Standard Plus I/O Banks Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 4 mA Std. 0.63 3.18 0.05 1.43 0.45 3.23 2.92 2.48 2.28 5.69 5.38 ns –1 0.54 2.70 0.04 1.21 0.39 2.75 2.48 2.11 1.94 4.84 4.58 ns 6 mA Std. 0.63 2.57 0.05 1.43 0.45 2.62 2.24 2.84 2.98 5.08 4.70 ns –1 0.54 2.19 0.04 1.21 0.39 2.23 1.90 2.42 2.54 4.32 4.00 ns 8 mA Std. 0.63 2.57 0.05 1.43 0.45 2.62 2.24 2.84 2.98 5.08 4.70 ns –1 0.54 2.19 0.04 1.21 0.39 2.23 1.90 2.42 2.54 4.32 4.00 ns 12 mA Std. 0.63 2.28 0.05 1.43 0.45 2.32 1.90 3.11 3.42 4.78 4.36 ns –1 0.54 1.94 0.04 1.21 0.39 1.97 1.62 2.64 2.91 4.07 3.71 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating values. |
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