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VMV3 датащи(PDF) 76 Page - Microsemi Corporation |
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VMV3 датащи(HTML) 76 Page - Microsemi Corporation |
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76 / 212 page ![]() Military ProASIC3/EL DC and Switching Characteristics 2-62 Revision 3 Table 2-91 • 1.8 V LVCMOS Low Slew Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7V Applicable to Standard Plus I/O Banks Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 2 mA Std. 0.63 8.81 0.05 1.43 0.45 8.98 7.51 2.48 1.61 11.44 9.97 ns –1 0.54 7.50 0.04 1.21 0.39 7.64 6.39 2.11 1.37 9.73 8.48 ns 4 mA Std. 0.63 7.10 0.05 1.43 0.45 7.23 6.43 2.92 2.75 9.69 8.89 ns –1 0.54 6.04 0.04 1.21 0.39 6.15 5.47 2.48 2.34 8.24 7.56 ns 6 mA Std. 0.63 6.06 0.05 1.43 0.45 6.17 5.68 3.23 3.29 8.63 8.14 ns –1 0.54 5.16 0.04 1.21 0.39 5.25 4.84 2.75 2.80 7.34 6.93 ns 8 mA Std. 0.63 6.06 0.05 1.43 0.45 6.17 5.68 3.23 3.29 8.63 8.14 ns –1 0.54 5.16 0.04 1.21 0.39 5.25 4.84 2.75 2.80 7.34 6.93 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating values. Table 2-92 • 1.8 V LVCMOS High Slew Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Applicable to Standard Plus I/O Banks Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 2 mA Std. 0.63 3.94 0.05 1.32 0.45 4.01 3.72 2.47 1.67 6.47 6.18 ns –1 0.54 3.35 0.04 1.12 0.39 3.41 3.16 2.10 1.42 5.51 5.26 ns 4 mA Std. 0.63 3.03 0.05 1.32 0.45 3.09 2.75 2.91 2.86 5.55 5.21 ns –1 0.54 2.58 0.04 1.12 0.39 2.63 2.34 2.48 2.44 4.72 4.43 ns 6 mA Std. 0.63 2.65 0.05 1.32 0.45 2.70 2.27 3.22 3.41 5.16 4.73 ns –1 0.54 2.26 0.04 1.12 0.39 2.30 1.93 2.74 2.90 4.39 4.02 ns 8 mA Std. 0.63 2.65 0.05 1.32 0.45 2.70 2.27 3.22 3.41 5.16 4.73 ns –1 0.54 2.26 0.04 1.12 0.39 2.30 1.93 2.74 2.90 4.39 4.02 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating values. |
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