352 datasheet(82/95 Pages) INTEL

82 / 95 page

Thermal Specifications and Design Considerations

Datasheet

temperature. Transistor Model parameters (Table 31) have been added to support

thermal sensors that use the transistor equation method. The Transistor Model may

provide more accurate temperature measurements when the diode ideality factor is

closer to the maximum or minimum limits. This thermal "diode" is separate from the

Thermal Monitor's thermal sensor and cannot be used to predict the behavior of the

Thermal Monitor.

NOTES:

Intel does not support or recommend operation of the thermal diode under reverse bias.

Characterized across a temperature range of 50 - 80 °C.

Not 100% tested. Specified by design characterization.

The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by

the diode equation:

IFW = IS * (e

/nkT –1)

where IS = saturation current, q = electronic charge, VD = voltage across the diode, k = Boltzmann Constant,

and T = absolute temperature (Kelvin).

The series resistance, RT, is provided to allow for a more accurate measurement of the

junction temperature. RT, as defined, includes the lands of the processor but does not

include any socket resistance or board trace resistance between the socket and the

external remote diode thermal sensor. RT can be used by remote diode thermal sensors

with automatic series resistance cancellation to calibrate out this error term. Another

application is that a temperature offset can be manually calculated and programmed into

an offset register in the remote diode thermal sensors as exemplified by the equation:

Terror = [RT * (N-1) * IFWmin] / [nk/q * ln N]

where Terror = sensor temperature error, N = sensor current ratio, k = Boltzmann Constant, q = electronic

charge.

NOTES:

Intel does not support or recommend operation of the thermal diode under reverse bias.

Same as IFW in Table 30

Characterized across a temperature range of 50 – 80 °C.

Not 100% tested. Specified by design characterization.

The ideality factor, nQ, represents the deviation from ideal transistor model behavior as

exemplified by the equation for the collector current:

IC = IS * (e

kT –1)

Where IS = saturation current, q = electronic charge, VBE = voltage across the transistor base emitter junction

(same nodes as VD), k = Boltzmann Constant, and T = absolute temperature (Kelvin).

The series resistance, RT, provided in the Diode Model Table (Table 30) can be used for

352 датащи(PDF) 82 Page - Intel Corporation