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P89LPC915FDH датащи(PDF) 59 Page - NXP Semiconductors

номер детали P89LPC915FDH
подробное описание детали  8-bit microcontrollers with accelerated two-clock 80C51 core 2 kB 3 V flash with 8-bit A/D converter
PDF  75 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

P89LPC915FDH датащи(HTML) 59 Page - NXP Semiconductors

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P89LPC915_916_917_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 15 December 2009
59 of 75
NXP Semiconductors
P89LPC915/916/917
8-bit microcontrollers with accelerated two-clock 80C51 core
[1]
Typical ratings are not guaranteed. The values listed are at room temperature, 3 V.
[2]
The IDD(oper),IDD(idle), and IDD(pd) specifications are measured using an external clock with the following functions disabled: comparators,
real-time clock, and watchdog timer.
[3]
The IDD(tpd) specification is measured using an external clock with the following functions disabled: comparators, real-time clock,
brownout detect, and watchdog timer.
[4]
See Section 10 “Limiting values” for steady state (non-transient) limits on IOL or IOH. If IOL/IOH exceeds the test condition, VOL/VOH may
exceed the related specification.
[5]
This specification can be applied to pins which have A/D input or analog comparator input functions when the pin is not being used for
those analog functions. When the pin is being used as an analog input pin, the maximum voltage on the pin must be limited to 4.0 V with
respect to VSS.
[6]
Pin capacitance is characterized but not tested.
[7]
Measured with port in quasi-bidirectional mode.
[8]
Measured with port in high-impedance mode.
[9]
Port pins source a transition current when used in quasi-bidirectional mode and externally driven from logic 1 to logic 0. This current is
highest when VI is approximately 2 V.
ILI
input leakage current
VI =VIL,VIH or Vth(HL)
[8] --
±10
µA
ITL
logical 1-to-0 transition
current, all ports
VI = 1.5 V at VDD = 3.6 V
[9]
−30
-
−450
µA
RRST(int)
internal pull-up resistance
on pin RST
10
-
30
k
Ω
Vbo
brownout trip voltage
2.4 V < VDD < 3.6 V; with
BOV = 1, BOPD = 0
2.40
-
2.70
V
Vref(bg)
band gap reference voltage
1.11
1.23
1.34
V
TCbg
band gap temperature
coefficient
-
10
20
ppm/
°C
Table 15.
Static characteristics …continued
VDD = 2.4 V to 3.6 V unless otherwise specified.
Tamb = −40 °C to +85 °C, or −40 °C to +125 °C (see Table 3 on page 3), unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit



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