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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HD6432351 датащи(PDF) 199 Page - Renesas Technology Corp |
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HD6432351 датащи(HTML) 199 Page - Renesas Technology Corp |
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199 / 1025 page  Section 6 Bus Controller Rev. 3.00 Sep 15, 2006 page 165 of 988 REJ09B0330-0300 6.5.7 Precharge State Control When DRAM is accessed, RAS precharging time must be secured. With the H8S/2350 Group, one Tp state is always inserted when DRAM space is accessed. This can be changed to two Tp states by setting the TPC bit in MCR to 1. Set the appropriate number of Tp cycles according to the DRAM connected and the operating frequency of the H8S/2350 Group. Figure 6.16 shows the timing when two Tp states are inserted. When the TCP bit is set to 1, two Tp states are also used for refresh cycles. Tp1 φ CSn (RAS) Read Write CAS, LCAS D15 to D0 D15 to D0 A23 to A0 Tp2 Tr Tc1 row column Tc2 HWR, LWR HWR, LWR ( UWE, LWE) ( UWE, LWE) Note: n = 2 to 5 Figure 6.16 Timing with Two Precharge States (2-WE System) |
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