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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TMS320VC5509 датащи(PDF) 81 Page - Texas Instruments |
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TMS320VC5509 датащи(HTML) 81 Page - Texas Instruments |
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81 / 124 page  Electrical Specifications 81 April 2001 − Revised January 2008 SPRS163H 5.7 Memory Interface Timings 5.7.1 Asynchronous Memory Timings Table 5−7 and Table 5−8 assume testing over recommended operating conditions (see Figure 5−6 and Figure 5−7). Table 5−7. Asynchronous Memory Cycle Timing Requirements NO. MIN MAX UNIT M1 tsu(DV-COH) Setup time, read data valid before CLKOUT high† 10 ns M2 th(COH-DV) Hold time, read data valid after CLKOUT high 0 ns M3 tsu(ARDY-COH) Setup time, ARDY valid before CLKOUT high† 10 ns M4 th(COH-ARDY) Hold time, ARDY valid after CLKOUT high 0 ns † To ensure data setup time, simply program the strobe width wide enough. ARDY is internally synchronized. If ARDY does meet setup or hold time, it may be recognized in the current cycle or the next cycle. Thus, ARDY can be an asynchronous input. Table 5−8. Asynchronous Memory Cycle Switching Characteristics NO. PARAMETER MIN MAX UNIT M5 td(COH-CEV) Delay time, CLKOUT high to CEx valid 0 8 ns M6 td(COH-CEIV) Delay time, CLKOUT high to CEx invalid 0 8 ns M7 td(COH-BEV) Delay time, CLKOUT high to BEx valid 8 ns M8 td(COH-BEIV) Delay time, CLKOUT high to BEx invalid 0 ns M9 td(COH-AV) Delay time, CLKOUT high to address valid 8 ns M10 td(COH-AIV) Delay time, CLKOUT high to address invalid 0 ns M11 td(COH-AOEV) Delay time, CLKOUT high to AOE valid 0 6 ns M12 td(COH-AOEIV) Delay time, CLKOUT high to AOE invalid 0 6 ns M13 td(COH-AREV) Delay time, CLKOUT high to ARE valid 0 6 ns M14 td(COH-AREIV) Delay time, CLKOUT high to ARE invalid 0 6 ns M15 td(COH-DV) Delay time, CLKOUT high to data valid 6 ns M16 td(COH-DIV) Delay time, CLKOUT high to data invalid 0 ns M17 td(COH-AWEV) Delay time, CLKOUT high to AWE valid 0 6 ns M18 td(COH-AWEIV) Delay time, CLKOUT high to AWE invalid 0 6 ns |
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