CE6313

Data Sheet

20

Intel Corporation

Nominal load capacitance 30 pF.

Equivalent series resistance <75

Ω

Figure 15 - Crystal Oscillator Circuit

Note: The crystal frequency should be chosen to ensure that the system clock would marginally exceed the

maximum symbol rate required, e.g. 10.111 MHz with a multiplier of x9 will give a 91 MHz system clock to

guarantee 45 MSps operation.

4.5

Electrical Characteristics

Conditions (unless specified otherwise):Tamb = 25°C

CVdd = 1.8 V

Vdd = 3.3 V

DC Electrical Characteristics

Parameter

Conditions/Pin

Symbol

Min.

Typ.

Max.

Unit

Core voltage

CVdd

1.71

1.8

1.89

V

Peripheral voltage

Vdd

3.13

3.3

3.47

V

Core current

45 MSps CR 7/8 91 MHz system clock

CIdd

165

mA

Peripheral current

Idd

7

mA

Total power

(91 MHz system

clock)

Ptot1

320

mW

Total power (stand-

by)

ADCs powered down. MPEG outputs

tri-stated

2.2

mW

Total power (sleep)

Pin 9 = logic ‘1’ ADCs powered down

0.35

mW

Output low level

2, 6 or 12 mA per output (see section

4.6, CE6313 Pinout Description)

Vol

0.4

V

Output high level

2, 6 or 12 mA per output

Voh

2.4

V

Output leakage

Tri-state when off or open-drain when

high

±1

µA

Output capacitance

All outputs except XTO, CLK1 & open-

drain types. Excludes packaging

contribution (~0.35 pF)

2.7

pF

Open-drain outputs.

Excludes packaging

contribution (~0.35 pF)

3.3

pF