MCF5373CAB180 datasheet(16/42 Pages) FREESCALE

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MCF5373 ColdFire® Microprocessor Data Sheet, Rev. 0.3

Preliminary

Preliminary Electrical Characteristics

Freescale Semiconductor

For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if

PI/O is neglected) is:

Eqn. 2

Solving equations 1 and 2 for K gives:

Eqn. 3

where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring

PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by

solving Equation 1 and Equation 2 iteratively for any value of TA.

5.3

ESD Protection

5.4

DC Electrical Specifications

Table 6. ESD Protection Characteristics1, 2

NOTES:

All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for

Automotive Grade Integrated Circuits.

A device is defined as a failure if after exposure to ESD pulses the device no longer meets

the device specification requirements. Complete DC parametric and functional testing is

performed per applicable device specification at room temperature followed by hot

temperature, unless specified otherwise in the device specification.

Characteristics

Symbol

Value

Units

ESD Target for Human Body Model

HBM

2000

Table 7. DC Electrical Specifications

Characteristic

Symbol

Min

Max

Unit

Core Supply Voltage

IVDD

1.4

1.6

PLL Supply Voltage

PLLVDD

1.4

1.6

CMOS Pad Supply Voltage

EVDD

3.0

3.6

Mobile DDR/Bus Pad Supply Voltage

SDVDD

1.65

1.95

DDR/Bus Pad Supply Voltage

SDVDD

2.25

2.75

SDR/Bus Pad Supply Voltage

SDVDD

3.0

3.6

USB Supply Voltage

USBVDD

3.0

3.6

CMOS Input High Voltage

EVIH

2EVDD +0.05

CMOS Input Low Voltage

EVIL

-0.05

0.8

Mobile DDR/Bus Input High Voltage

SDVIH

TBD

SDVDD +0.05

Mobile DDR/Bus Input Low Voltage

SDVIL

-0.05

TBD

DDR/Bus Input High Voltage

SDVIH

2SDVDD +0.05

DDR/Bus Input Low Voltage

SDVIL

-0.05

0.8

TJ 273°C

()

---------------------------------

KPD

TA 273°C

() Q

JMA

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