| поискавой системы для электроныых деталей |
|
MCF5373CAB180 датащи(PDF) 25 Page - Freescale Semiconductor, Inc |
|
|
|||||||||||||||||||||||||||||
MCF5373CAB180 датащи(HTML) 25 Page - Freescale Semiconductor, Inc |
|
25 / 42 page ![]() Preliminary Electrical Characteristics MCF5373 ColdFire® Microprocessor Data Sheet, Rev. 0.3 Preliminary Freescale Semiconductor 25 SD4 Pulse Width Low tSDCKH 0.45 0.55 SD_CLK 4 SD5 Address, SD_CKE, SD_CAS, SD_RAS, SD_WE, SD_BA, SD_CS[1:0] - Output Valid tSDCHACV —0.5 × SD_CLK +1.0 ns SD6 Address, SD_CKE, SD_CAS, SD_RAS, SD_WE, SD_BA, SD_CS[1:0] - Output Hold tSDCHACI 2.0 — ns SD7 SD_SDR_DQS Output Valid tDQSOV — Self timed ns 5 SD8 SD_DQS[3:0] input setup relative to SD_CLK tDQVSDCH 0.25 × SD_CLK 0.40 × SD_CLK ns 6 SD9 SD_DQS[3:2] input hold relative to SD_CLK tDQISDCH Does not apply. 0.5 ×SD_CLK fixed width. 7 SD10 Data (D[31:0]) Input Setup relative to SD_CLK (reference only) tDVSDCH 0.25 × SD_CLK —ns 8 SD11 Data Input Hold relative to SD_CLK (reference only) tDISDCH 1.0 — ns SD12 Data (D[31:0]) and Data Mask(SD_DQM[3:0]) Output Valid tSDCHDMV —0.75 × SD_CLK + 0.5 ns SD13 Data (D[31:0]) and Data Mask (SD_DQM[3:0]) Output Hold tSDCHDMI 1.5 — ns NOTES: 1 The device supports same frequency of operation for both FlexBus and SDRAM clock operates as that of the internal bus clock. Please see the PLL chapter of the MCF5373 Reference Manual for more information on setting the SDRAM clock rate. 2 SD_CLK is one SDRAM clock in (ns). 3 Pulse width high plus pulse width low cannot exceed min and max clock period. 4 Pulse width high plus pulse width low cannot exceed min and max clock period. 5 SD_DQS is designed to pulse 0.25 clock before the rising edge of the memory clock. This is a guideline only. Subtle variation from this guideline is expected. SD_DQS will only pulse during a read cycle and one pulse will occur for each data beat. 6 SDR_DQS is designed to pulse 0.25 clock before the rising edge of the memory clock. This spec is a guideline only. Subtle variation from this guideline is expected. SDR_DQS will only pulse during a read cycle and one pulse will occur for each data beat. 7 The SDR_DQS pulse is designed to be 0.5 clock in width. The timing of the rising edge is most important. The falling edge does not affect the memory controller. 8 Since a read cycle in SDR mode still uses the DQS circuit within the device, it is most critical that the data valid window be centered 1/4 clk after the rising edge of DQS. Ensuring that this happens will result in successful SDR reads. The input setup spec is just provided as guidance. Table 11. SDR Timing Specifications (continued) Symbol Characteristic Symbol Min Max Unit Notes |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |