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EDBA164B4PK-1DITF-R датащи(PDF) 26 Page - Micron Technology

номер детали EDBA164B4PK-1DITF-R
подробное описание детали  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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производитель  MICRON [Micron Technology]
домашняя страница  http://www.micron.com
Logo MICRON - Micron Technology

EDBA164B4PK-1DITF-R датащи(HTML) 26 Page - Micron Technology

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Figure 10: Functional Block Diagram
CS_n
CA[9:0]
Input and Output buffer
Latch circuit
Data control circuit
Column
address
buffer
and
burst
counter
Row
address
buffer
and
refresh
counter
Mode
register
DQ
CK_t
CK_c
CKE
DQS_t
DQS_c
DM
Bank n
Column decoder
Memory cell array
Bank 0
Sense amp.
Note:
1. 512Mb is a 4-bank only.
Simplified State Diagram
The state diagram provides a simplified illustration of allowed state transitions and the
related commands to control them. For a complete definition of the device behavior,
the information provided by the state diagram should be integrated with the truth ta-
bles and timing specification. The truth tables provide complementary information to
the state diagram, they clarify the device behavior and the applied restrictions when
considering the actual state of all the banks.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Simplified State Diagram
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
26
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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