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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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EDBA164B4PK-1DITF-R датащи(PDF) 87 Page - Micron Technology |
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EDBA164B4PK-1DITF-R датащи(HTML) 87 Page - Micron Technology |
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87 / 152 page  Figure 59: READ to Power-Down Entry CK_c CKE1, 2 T0 T1 T2 Tx Tx + 1 Tx + 2 Tx + 3 Tx + 4 Tx + 5 Tx + 6 Tx + 7 Tx + 8 Tx + 9 CMD DQ DQS_c READ D OUT DOUT DOUT DOUT RL tISCKE CKE1, 2 T0 T1 T2 Tx Tx + 1 Tx + 2 Tx + 3 Tx + 4 Tx + 5 Tx + 6 Tx + 7 Tx + 8 Tx + 9 CMD DQ READ D OUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT RL tISCKE BL = 4 BL = 8 CK_t CK_c CK_t DQS_t DQS_c DQS_t Notes: 1. CKE must be held HIGH until the end of the burst operation. 2. CKE can be registered LOW at (RL + RU(tDQSCK(MAX)/tCK) + BL/2 + 1) clock cycles after the clock on which the READ command is registered. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Power-Down 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 87 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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