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EDBA164B4PK-1DITF-R датащи(PDF) 81 Page - Micron Technology

номер детали EDBA164B4PK-1DITF-R
подробное описание детали  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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производитель  MICRON [Micron Technology]
домашняя страница  http://www.micron.com
Logo MICRON - Micron Technology

EDBA164B4PK-1DITF-R датащи(HTML) 81 Page - Micron Technology

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Figure 53: MR32 and MR40 DQ Calibration Timing – RL = 3, tMRR = 2
MRR
NOP1
NOP
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_c
CK_t
CA[9:0]
CMD
DQS_c
DQS_t
DQ0
DQ[7:1]
DQ8
DQ[15:9]
DQ16
DQ[23:17]
DQ24
DQ[31:25]
RL = 3
Transitioning data
Optionally driven the same as DQ0 or 0b
tMRR = 2
tMRR = 2
0011
10
10
Reg 40
Reg 40
Reg 32
Reg 32
MRR
0011
10
10
0011
10
10
0011
10
10
0011
10
10
0011
10
10
0011
10
10
0011
10
10
Pattern A
Pattern B
x32
x16
Notes:
1. The MRR command has a burst length of four.
2. The MRR operation must not be interrupted.
3. A MRR to MR32 and MR40 drives valid data on DQ[0] during the entire burst. For a x16
device, DQ[8] drives the same information as DQ[0] during the burst. For a x32 device,
DQ[8], DQ[16], and DQ[24] drive the same information as DQ[0] during the burst.
4. For a x16 device, DQ[7:1] and DQ[15:9] may optionally drive the same information as
DQ[0], or they may drive 0b during the burst. For a x32 device, DQ[7:1], DQ[15:9],
DQ[23:17], and DQ[31:25] may optionally drive the same information as DQ[0], or they
may drive 0b during the burst.
5. The MODE REGISTER command period is tMRR. No command (other than NOP) is al-
lowed during this period.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
MODE REGISTER READ
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
81
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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