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ADN8835ACPZ-R7 датащи(PDF) 4 Page - Analog Devices |
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ADN8835ACPZ-R7 датащи(HTML) 4 Page - Analog Devices |
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4 / 27 page ![]() ADN8835 Data Sheet Rev. B | Page 4 of 27 SPECIFICATIONS VIN = 2.7 V to 5.5 V, TJ = −40°C to +125°C for minimum/maximum specifications, and TA = 25°C for typical specifications, unless otherwise noted. Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit POWER SUPPLY Driver Supply Voltage VPVIN 2.7 5.5 V Controller Supply Voltage VVDD 2.7 5.5 V Supply Current IVDD PWM not switching 3.3 5 mA Shutdown Current ISD EN/SY = AGND or VLIM/SD = AGND 350 700 µA Undervoltage Lockout (UVLO) VUVLO VVDD rising 2.45 2.55 2.65 V UVLO Hysteresis UVLOHYST 80 90 100 mV REFERENCE VOLTAGE VVREF IVREF = 0 mA to 10 mA 2.475 2.50 2.525 V LINEAR OUTPUT Output Voltage VLDR ILDR = 0 A Low 0 V High VPVIN V Maximum Source Current ILDR_SOURCE 3.5 A Maximum Sink Current ILDR_SINK 3.5 A On Resistance ILDR = 1.5 A P-MOSFET RDS_PL(ON) VPVIN = 5.0 V 50 70 mΩ VPVIN = 3.3 V 55 85 mΩ N-MOSFET RDS_NL(ON) VPVIN = 5.0 V 45 80 mΩ VPVIN = 3.3 V 50 90 mΩ Leakage Current P-MOSFET ILDR_P_LKG 0.1 10 µA N-MOSFET ILDR_N_LKG 0.1 10 µA Linear Amplifier Gain ALDR 40 V/V LDR Short-Circuit Threshold ILDR_SH_GNDL LDR short to PGNDL, enter hiccup 4 A ILDR_SH_PVIN(L) LDR short to PVIN, enter hiccup −4 A Hiccup Cycle tHICCUP 15 ms PWM OUTPUT Output Voltage VSFB ISFB = 0 A V Low 0.06 × VPVIN V High 0.93 × VPVIN V Maximum Source Current ISW_SOURCE 3.5 A Maximum Sink Current ISW_SINK 3.5 A On Resistance ISW = 1.5 A P-MOSFET RDS_PS(ON) VPVIN = 5.0 V 60 85 mΩ VPVIN = 3.3 V 70 100 mΩ N-MOSFET RDS_NS(ON) VPVIN = 5.0 V 45 85 mΩ VPVIN = 3.3 V 55 95 mΩ Leakage Current P-MOSFET ISW_P_LKG 0.1 10 µA N-MOSFET ISW_N_LKG 0.1 10 µA SW Node Rise Time1 tSW_R CSW = 1 nF 1 ns PWM Duty Cycle2 DSW 6 93 % SFB Input Bias Current ISFB 1 2 µA PWM OSCILLATOR Internal Oscillator Frequency fOSC EN/SY high 1.85 2.0 2.15 MHz |
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