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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MC56F81663 датащи(PDF) 54 Page - NXP Semiconductors |
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MC56F81663 датащи(HTML) 54 Page - NXP Semiconductors |
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54 / 73 page  Table 24. NVM program/erase timing specifications (continued) Symbol Description Min. Typ. Max. Unit Notes thversscr Sector Erase high-voltage time — 13 113 ms 1 thversall Erase All high-voltage time — 52 452 ms 1 1. Maximum time based on expectations at cycling end-of-life. 11.4.1.2 Flash timing specifications — commands Table 25. Flash command timing specifications Symbol Description Min. Typ. Max. Unit Notes trd1sec1k Read 1s Section execution time (flash sector) — — 60 μs 1 tpgmchk Program Check execution time — — 45 μs 1 trdrsrc Read Resource execution time — — 30 μs 1 tpgm4 Program Longword execution time — 65 145 μs — tersscr Erase Flash Sector execution time — 14 114 ms 2 trd1all Read 1s All Blocks execution time — — 1.8 ms 1 trdonce Read Once execution time — — 25 μs 1 tpgmonce Program Once execution time — 65 — μs — tersall Erase All Blocks execution time — 88 650 ms 2 tvfykey Verify Backdoor Access Key execution time — — 30 μs 1 tersallu Erase All Blocks Unsecure execution time — 88 650 ms 2 1. Assumes 25 MHz flash clock frequency. 2. Maximum times for erase parameters based on expectations at cycling end-of-life. 11.4.1.3 Flash high voltage current behaviors Table 26. Flash high voltage current behaviors Symbol Description Min. Typ. Max. Unit IDD_PGM Average current adder during high voltage flash programming operation — 2.5 6.0 mA IDD_ERS Average current adder during high voltage flash erase operation — 1.5 4.0 mA 11.4.1.4 Reliability specifications Table 27. NVM reliability specifications Symbol Description Min. Typ.1 Max. Unit Notes Program Flash tnvmretp10k Data retention after up to 10 K cycles 5 50 — years — tnvmretp1k Data retention after up to 1 K cycles 20 100 — years — Table continues on the next page... System modules MC56F81xxx, Rev. 1.1, 12/2020 54 NXP Semiconductors |
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