Datasheet

Document Number: 002-19966 Rev. *F

Page 29 of 42

Memory

System Resources

Power-on Reset (POR)

Table 24. Flash DC Specifications

Spec ID

Parameter

Description

Min

Typ

Max

Units

Details/Conditions

SID173

Erase and program voltage

1.71

–

5.5

V

–

Notes

10. It can take as much as 20 milliseconds to write to Flash. During this time the device should not be Reset, or Flash operations will be interrupted and cannot be relied

on to have completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs.

Make certain that these are not inadvertently activated.

11. Guaranteed by characterization.

Table 25. Flash AC Specifications

Spec ID

Parameter

Description

Min

Typ

Max

Units

Details/Conditions

SID174

Row (block) write time (erase and

program)

–

–

20

ms

Row (block) = 256 bytes

SID175

Row erase time

–

–

16

–

SID176

–

–

4

–

SID178

Bulk erase time (64 KB)

–

–

35

–

SID180[11]

Total device program time

–

–

7

Seconds

–

SID181[11]

Flash endurance

100 K

–

–

Cycles

–

SID182[11]

P/E cycles

20

–

–

Years

–

SID182A[11] –

P/E cycles

10

–

–

–

SID256

TWS48

Number of Wait states at 48 MHz

2

–

–

CPU execution from

Flash

SID257

TWS24

Number of Wait states at 24 MHz

1

–

–

CPU execution from

Flash

Table 26. Power On Reset (PRES)

Spec ID

Parameter

Description

Min

Typ

Max

Units

Details/Conditions

SID.CLK#6 SR_POWER_UP Power supply slew rate

1

–

67

V/ms

At power-up

SID185[11]

Rising trip voltage

0.80

–

1.5

V

–

SID186[11]

Falling trip voltage

0.70

–

1.4

–

Spec ID

Parameter

Description

Min

Typ

Max

Units

Details/Conditions

SID190[11]

BOD trip voltage in active and

sleep modes

1.48

–

1.62

V

–

SID192[11]

BOD trip voltage in Deep Sleep

1.11

–

1.5

–