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ATSAMB11XR датащи(PDF) 50 Page - Microchip Technology

номер детали ATSAMB11XR
подробное описание детали  Ultra Low Power BLE 4.1 SiP/Module
PDF  87 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

ATSAMB11XR датащи(HTML) 50 Page - Microchip Technology

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Parameter
Condition
Min.
Typ.
Max.
Unit
INL(2)
100 KSPS. Internal VREF=1.6V. Same
result for external VREF.
-2
+2.5
LSB
THD
1 kHz sine input at 100 KSPS
73
dB
SINAD
1 kHz sine input at 100 KSPS
62.5
dB
SFDR
1 kHz sine input at 100 KSPS
73.7
dB
Conversion time
13
cycles
Current consumption
Using external VREF, at 100 KSPS
13.5
µA
Using internal VREF, at 100 KSPS
25.0
µA
Using external VREF, at 1 MSPS
94
µA
Using internal VREF, at 1MSPS
150
µA
Using internal VREF, during VBAT
monitoring
100
µA
Using internal VREF, during temperature
monitoring
50
µA
Internal reference voltage
Mean value using VBAT = 2.5V
1.026 (1)
V
Standard deviation across parts
10.5
mV
VBAT Sensor Accuracy
Without calibration
-55
+55
mV
With offset and gain calibration
-17
+17
mV
Temperature Sensor
Accuracy
Without calibration
-9
+9
ºC
With offset calibration
-4
+4
ºC
Note: 
1.
Effective VREF is 2xInternal Reference Voltage.
2.
These values are characterized for 0x4000F404<28:29>: 0x03 and with Vin in the range 0.25 VBAT
to 0.75 VBAT. If Vin is to be used beyond this range, configure 0x4000F404<28:29> with value =
0x00.
10.8
ADC Typical Characteristics
TC = 25ºC and VBAT = 3.0V, unless otherwise noted.
ATSAMB11XR/ZR
© 2017 Microchip Technology Inc.
Datasheet Preliminary
DS70005342A-page 50



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