IC-HTP datasheet(7/51 Pages) ICHAUS

7 / 51 page

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iC-HTP

DUAL CW P-TYPE LASER DIODE DRIVER

Rev B1, Page 7/51

ELECTRICAL CHARACTERISTICS

Operating Conditions: VB = 2.8 . . . 11 V (referenced to GND), Tj = -40 . . . 125 °C unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

112 Tci

Time to light

NSTBY = hi, ECIE = 0, COMP = 010,

light off to 80 % target value

300

µs

113 Tcio

Time to target light

Light from 80 % to 99 % target value

4700

µs

114 Idc(LDA)

LDAx ACC mode current

EC1, EC2, EMC = hi, EACCx = 1,

V(LDAx) = V(VBLx)-0.7 V . . . 1.5 V, CRNGx = 00

REFx(9:0) = 0x000, RACCx = 0

-200

-130

-70

REFx(9:0) = 0x3FF, RACCx = 0

-2200

-1570

-940

REFx(9:0) = 0x000, RACCx = 1

-25

-15

-9

REFx(9:0) = 0x3FF, RACCx = 1

-230

-160

-90

115 TK

Temperature coefficient ACC

mode

-1500

-500

ppm/K

116 IdcLSB

REFx(9:0) step current at LDA in

ACC mode

EC1, EC2, EMC = hi, EACCx = 1,

V(LDAx) = V(VBLx)-0.7 V . . . 1.5 V, CRNGx = 00

RACCx = 0;

0.7

1.35

RACCx = 1;

0.06

0.15

0.25

Programmable Resistor

201 Rmdk

Resistor at MDKx pin

RMDx(7:0) = 0xF0 . . . 0xFF, DISPx = 0

350

500

650

kΩ

RMDx(7:0) = 0x00 . . . 0x0F, DISPx = 0

0.154

0.220

0.286

kΩ

202 Tk

Temperature coefficient

-1500

-500

ppm/K

203 ∆ R

Percental resistor increment

∆

R = R(n+1)−R(n)

R(n)

3.3

204 Ileak(MDK) MDKx leakage current

DISPx = 1

-1

µA

D/A Converter

301 R(DAC)

D/A converter resolution

bit

302 ∆ V

Percental voltage increments

∆

V = V(n+1)−V(n)

V(n)

0.05

0.235

303 V(DAC)

D/A converter

REFx(9:0) = 0x000 lowest value

0.09

0.10

0.12

REFx(9:0) = 0x3FF highest value

1.00

1.10

1.25

304 DATK

DAC Temperature Accuracy

REFx(9:0) = 0x3FF highest value

-2.5

2.5

Check Output NCHK

401 Vs()lo

Saturation Voltage lo at NCHK

I(NCHK) = 1.0 mA

0.4

402 Isc()lo

Short Circuit Current lo at NCHK V(NCHK) = 0.4 . . . 3.3 V

403 Ilk()

Leakage Current at NCHK

NCHK = 1;

V(NCHK) = 0 . . . 5.5 V

-10

µA

Series Regulator Output VDD

501 V(VDD)

Regulated output voltage

VB = 3.7 . . . 8 V, I(VDD) = -10 . . . 0 mA

NSTBY = hi

3.5

502 V(VB,VDD) Voltage Drop between VB and

VDD

VDD unregulated, I(VDD) = -10 . . . 0 mA

NSTBY = hi

100

400

503 C(VOUT)

Capacitor at VDD

Ri(C) < 1 Ω

3.3

µF

504 Tvdd

Settling time VDD

NSTBY lo → hi, no load at VDD,

V(VDD) 0 to 90 %

CVDD = 1 µF

Digital inputs

601 Vt()hi

Input Threshold Voltage hi at

NCS/A1, MISO/SDA, MOSI/A0,

SCLK/SCL, NSTBY, EC1, EC2

602 Vt()lo

Input Threshold Voltage lo at

NCS/A1, MISO/SDA, MOSI/A0,

SCLK/SCL, NSTBY, EC1, EC2

VB > 3 V

0.7

VB = 2.8 V

0.6

603 Vt()hys

Hysteresis at NCS/A1,

MISO/SDA, MOSI/A0,

SCLK/SCL, NSTBY, EC1, EC2

Vt()hys = Vt()hi - Vt()lo

100

604 Ipd()

Pull-Down Current at MOSI/A0,

EC1, EC2

V() = 0.4 V . . . VDD

µA

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