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iC-HTP

DUAL CW P-TYPE LASER DIODE DRIVER

Rev B1, Page 6/51

ELECTRICAL CHARACTERISTICS

Operating Conditions: VB = 2.8 . . . 11 V (referenced to GND), Tj = -40 . . . 125 °C unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

Total Device

Functionality and parameters beyond the operating conditions (with reference to independent voltage supplies, for instance) are to be

verified within the individual application using FMEA methods.

001 VB

Permissible Supply Voltage

Referenced to GND

2.8

11

V

002 I(VB)

Standby Current at VB

V(NSTBY) ≤ 0.4 V

10

µA

003 I(VB)

Supply Current at VB

No load, EC1, EC2, NSTBY = hi

5

mA

004 V(VB)off

Turn-off threshold

Decreasing VB

1.4

2.6

V

005 V(VBLx)off Turn-off threshold

Decreasing VBLx

1.4

2.6

V

006 VBLxequal Detection for VBL1 not equal to

VBL2

Merge mode enabled, |VBL1-VBL2|

0.5

1.3

V

007 V(VDD)on Turn-on threshold

Increasing VDD

1.4

2.2

V

008 V(VDD)off Turn-off threshold

Decreasing VDD

1.2

2.2

V

009 V(VDD)Hys Power-on hysteresis

20

250

mV

010 V(VB)INITR RAM memory reset during

Stand-By

NSTBY = lo

0.85

1.4

V

011 Rgnd()

Resistor to VDD at MRH1, MRH2

20

Ω

012 Ragnd()

Resistor to VBLx at CIHx

20

Ω

013 Vc()lo

Clamp Voltage lo at VB,

VDD, NCHK, EMC, NCS/A1,

MISO/SDA, MOSI/A0,

SCLK/SCL, INS/WKR, NSTBY,

EC1, EC2, DCO, LDA1, LDA2,

CI1, CIH1, CI2, CIH2, AGND1,

AGND2, MDK1, MDK2

I() = -10 mA

-1.6

-0.3

V

Laser Driver LDAx, CIx, MDKx

101 Vs(LDA)lo Saturation Voltage lo at LDA

CRNGx = 00

I(LDAx) = -750 mA V()= V(VBLx) - V(LDAx)

0.7

V

102 V(LDASAT) LDAx saturation detection

threshold

RLDASx = 00

0.4

0.6

0.9

V

RLDASx = 01

0.6

0.8

1.1

V

RLDASx = 10

0.9

1.1

1.2

V

RLDASx = 11

1.1

1.3

1.5

V

103 Idc(LDA)

Permissible DC Current at LDAx CRNGx = 00

-750

mA

CRNGx = 01

-100

mA

CRNGx = 10

-25

mA

CRNGx = 11

-9

mA

104 Ileak(LDA) LDAx leakage current

V(LDAx) = 0 V

-10

µA

105 C(CI)

Possible capacitor at CI1, CI2

ECIE = 0, EMC = hi

0

µF

106 I(CI)

Charge Current at CI1, CI2

V(CI) = 0 V, EC1, EC2 = hi, ECIEx = 1

-150

-15

µA

COMP = 111

107 I(LDA)max Laser overcurrent shutdown

threshold

CRNGx = 00 EACCx = 0

V(LDA) = V(VBLx)-0.7 V . . . 1.5 V

ILIMx(7:0) = 0x00, RACCx = 0

-25

0

mA

ILIMx(7:0) = 0xFF, RACCx = 0

-2266

-900

mA

ILIMx(7:0) = 0x00, RACCx = 1

-3.2

0

mA

ILIMx(7:0) = 0xFF, RACCx = 1

-284

-150

mA

108 ∆ I(LDA)

Shutdown threshold resolution

CRNGx = 00, ILIMx(7:0) = 0x00 to 0xFF

RACCx = 0

-5

-4

-3

mA

RACCx = 1

-0.625

-0.5

-0.375

mA

109 tovc

Time to overcurrent shutdown

Laser current decreased 10%

1

5

µs

110 V(MDK)

Voltage at MDK1, MDK2

Closed control loop

EC1, EC2 = hi

EMC = lo, INS/WKR = lo

110

125

145

mV

EMC = lo, INS/WKR = hi

220

250

280

mV

111

Ten

Time to laser enabled

NSTBY lo → hi, no load at VDD,

1.3

ms

V(VDD) 0 to 90 %,

CVDD = 1 µF, EMC = lo