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DP8459 датащи(PDF) 24 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали DP8459
подробное описание детали  All-Code Data Synchronizer
PDF  35 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
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DP8459 датащи(HTML) 24 Page - National Semiconductor (TI)

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FIGURE 23. DP8459 Window Measurement Configuration
4.2 WINDOW TRUNCATION TESTING
The DP8459 static window truncation specification is an
aggregate figure within which the window margin loss
contributions from all relevant blocks in the data synchroniza-
tion chain are combined into the single parameter, t
T.
The preliminary DP8459 static window specification, t
T,
applies only to the factory-tested data rates of 10 Mb/s
(with RS0,1,2 = 010) and 20 Mb/s (with RS0,1,2 = 000), with
the component values as listed for each corresponding
data rate in
Figures 5, and 10, test configuration as shown
in
Figure 23, test procedure as shown in Figure 24, and
strobe word M = −2 for 10 Mbits/sec and M = −3 for 20
Mbits/sec. Significant variation in t
T due to the use of
other filters and data rates is not expected.
The
test
algorithm
employed
in
the
outgoing
factory
measurement (screening) of t
T emulates an ENCODED READ
DATA stream consisting of a long synchronization field with a
single, movable test bit at its end. This method is referred to as
static window testing, since the window in which the test bit is
inserted is fully stabilized and unable to react instantaneously
to the phase step introduced by the displaced bit. The standard
screening procedure employed for determining DP8459 static
window truncation is divided into two portions, one which
determines the location of the leading (front) window boundary
and one which determines the trailing (back) window
boundary. The DP8459 is made to cycle through the read
operation many times as a variable bit is moved, once per read
cycle, from outside the target window across the ideal leading
boundary and into the window. The bit is advanced toward the
center of the target window until it resides in a position where
it is able to be detected a large number of times consecutively,
guaranteeing VCO jitter immunity. The time displacement
between the bit’s valid detection position and the ideal leading
window boundary is recorded as t
Tf (front). (This value may be
negative if the actual window boundary resides outside the
ideal window.) The variable bit is then placed outside the
trailing window boundary and the variable bit is again moved,
once per read cycle, from outside the target window across the
ideal boundary and into the window. The bit continues to
advanced toward the center of the recognition region until it is
in a position where it is able to be read a large number of times
consecutively. The time displacement between the bit’s valid
detection position and the ideal trailing window boundary is
recorded as t
Tb (back). (Again, the value may be negative if the
actual window boundary resides outside the ideal window due
to window encroachment.) The larger (more positive) of the
two (t
Tf,tTb) values is taken as tT. A flow chart of the test
sequence is shown in
Figure 24. Tables of external component
values used for production screening of the DP8459 at various
data rates are shown in
Figures 5 and 10.
Window truncation evaluated within data patterns containing
shifted bits is a direct function of PLL dynamics which are
under Customer control, and thus is neither tested nor
specified.
TL/F/9322-24
Notes: SD and SCK outputs are buffered by Advanced Schottky gates to provide standardized, typical loading conditions.
CRC, CRD, CRE, RG, and ERD are driven by a pattern generator providing the appropriate sequences both to load the control register with the appropriate
strobe position information and to cycle the RG and ERD test routine as per
Figure 24 .
PrintDate=1996/07/31 PrintTime=11:06:10 ds009322 Rev. No. 1
Proof
24
24
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