RF430CL331HIPWR datasheet(7/60 Pages) TI1

7 / 60 page

RF430CL331H

www.ti.com

SLASE18A – SEPTEMBER 2015 – REVISED NOVEMBER 2015

Specifications

4.1

Absolute Maximum Ratings

(1) (2)

MIN

MAX

UNIT

Voltage applied at VCC referenced to VSS (VAMR)

–0.3

4.1

Voltage applied at VANT referenced to VSS (VAMR)

–0.3

4.1

Voltage applied to any pin (references to VSS)

–0.3

VCC + 0.3

Diode current at any device pin

±2

Storage temperature, Tstg

(3)

–40

125

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are referenced to VSS.

(3)

For soldering during board manufacturing, it is required to follow the current JEDEC J-STD-020 specification with peak reflow

temperatures not higher than classified on the device label on the shipping boxes or reels.

4.2

ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)

±2000

V(ESD)

Electrostatic discharge

Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)

±500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

4.3

Recommended Operating Conditions

Typical values are specified at VCC = 3.3 V and TA = 25°C (unless otherwise noted)

MIN

NOM

MAX

UNIT

During program execution no RF field present

3.0

3.3

3.6

VCC

Supply voltage

During program execution with RF field present

2.0

3.3

3.6

VSS

Supply voltage (GND reference)

Operating free-air temperature

–40

°C

Decoupling capacitor on VCC

(1)

0.1

µF

Decoupling capacitor on VCC

(1)

µF

CVCORE

Capacitor on VCORE

(1)

0.1

0.47

µF

(1)

Low ESR (equivalent series resistance) capacitor

4.4

Recommended Operating Conditions, Resonant Circuit

MIN

NOM

MAX

UNIT

Carrier frequency

13.56

MHz

VANT_peak Antenna input voltage

3.6

Impedance of LC circuit

6.5

15.5

LRES

Coil inductance(1)

2.66

µH

CRES

Total resonance capacitance(1), CRES = CIN + CTune

51.8

CTune

External resonance capacitance

CRES – CIN

(2)

Tank quality factor

(1)

The coil inductance of the antenna LRES with the external capacitance CTune plus the device internal capacitance CIN is a resonant

circuit. The resonant frequency of this LC circuit must be close to the carrier frequency fc:

fRES = 1 / [2π(LRESCRES)

1/2] = 1 / [2π(L

RES(CIN+CTune))

1/2] ≈ f

(2)

For CIN refer to Section 4.9.3.

Specifications

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