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PIC16F87 датащи(PDF) 29 Page - Microchip Technology |
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PIC16F87 датащи(HTML) 29 Page - Microchip Technology |
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29 / 230 page ![]() 2002-2013 Microchip Technology Inc. DS30487D-page 29 PIC16F87/88 3.3 Reading Data EEPROM Memory To read a data memory location, the user must write the address to the EEADR register, clear the EEPGD con- trol bit (EECON1<7>) and then set control bit RD (EECON1<0>). The data is available in the very next cycle in the EEDATA register; therefore, it can be read in the next instruction (see Example 3-1). EEDATA will hold this value until another read or until it is written to by the user (during a write operation). The steps to reading the EEPROM data memory are: 1. Write the address to EEADR. Make sure that the address is not larger than the memory size of the device. 2. Clear the EEPGD bit to point to EEPROM data memory. 3. Set the RD bit to start the read operation. 4. Read the data from the EEDATA register. EXAMPLE 3-1: DATA EEPROM READ 3.4 Writing to Data EEPROM Memory To write an EEPROM data location, the user must first write the address to the EEADR register and the data to the EEDATA register. Then, the user must follow a specific write sequence to initiate the write for each byte. The write will not initiate if the write sequence is not exactly followed (write 55h to EECON2, write AAh to EECON2, then set WR bit) for each byte. We strongly recommend that interrupts be disabled during this code segment (see Example 3-2). Additionally, the WREN bit in EECON1 must be set to enable write. This mechanism prevents accidental writes to data EEPROM due to errant (unexpected) code execution (i.e., lost programs). The user should keep the WREN bit clear at all times except when updating EEPROM. The WREN bit is not cleared by hardware After a write sequence has been initiated, clearing the WREN bit will not affect this write cycle. The WR bit will be inhibited from being set unless the WREN bit is set. At the completion of the write cycle, the WR bit is cleared in hardware and the EE Write Complete Interrupt Flag bit (EEIF) is set. The user can either enable this interrupt or poll this bit. EEIF must be cleared by software. The steps to write to EEPROM data memory are: 1. If step 10 is not implemented, check the WR bit to see if a write is in progress. 2. Write the address to EEADR. Make sure that the address is not larger than the memory size of the device. 3. Write the 8-bit data value to be programmed in the EEDATA register. 4. Clear the EEPGD bit to point to EEPROM data memory. 5. Set the WREN bit to enable program operations. 6. Disable interrupts (if enabled). 7. Execute the special five instruction sequence: Write 55h to EECON2 in two steps (first to W, then to EECON2). Write AAh to EECON2 in two steps (first to W, then to EECON2). Set the WR bit. 8. Enable interrupts (if using interrupts). 9. Clear the WREN bit to disable program operations. 10. At the completion of the write cycle, the WR bit is cleared and the EEIF interrupt flag bit is set (EEIF must be cleared by firmware). If step 1 is not implemented, then firmware should check for EEIF to be set, or WR to clear, to indicate the end of the program cycle. EXAMPLE 3-2: DATA EEPROM WRITE BANKSEL EEADR ; Select Bank of EEADR MOVF ADDR, W ; MOVWF EEADR ; Data Memory Address ; to read BANKSEL EECON1 ; Select Bank of EECON1 BCF EECON1, EEPGD; Point to Data memory BSF EECON1, RD ; EE Read BANKSEL EEDATA ; Select Bank of EEDATA MOVF EEDATA, W ; W = EEDATA BANKSEL EECON1 ; Select Bank of ; EECON1 BTFSC EECON1, WR ; Wait for write GOTO $-1 ; to complete BANKSEL EEADR ; Select Bank of ; EEADR MOVF ADDR, W ; MOVWF EEADR ; Data Memory ; Address to write MOVF VALUE, W ; MOVWF EEDATA ; Data Memory Value ; to write BANKSEL EECON1 ; Select Bank of ; EECON1 BCF EECON1, EEPGD ; Point to DATA ; memory BSF EECON1, WREN ; Enable writes BCF INTCON, GIE ; Disable INTs. MOVLW 55h ; MOVWF EECON2 ; Write 55h MOVLW AAh ; MOVWF EECON2 ; Write AAh BSF EECON1, WR ; Set WR bit to ; begin write BSF INTCON, GIE ; Enable INTs. BCF EECON1, WREN ; Disable writes |
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