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PIC16LC712 датащи(PDF) 73 Page - Microchip Technology |
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PIC16LC712 датащи(HTML) 73 Page - Microchip Technology |
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73 / 106 page ![]() 1999-2013 Microchip Technology Inc. DS41106C-page 73 PIC16C712/716 12.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (†) Ambient temperature under bias............................................................................................................ .-55°C to +125°C Storage temperature .............................................................................................................................. -65°C to +150°C Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) ......................................... -0.3V to (VDD + 0.3V) Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +7.5V Voltage on MCLR with respect to VSS (Note 2) ......................................................................................... 0V to +13.25V Voltage on RA4 with respect to Vss ............................................................................................................... 0V to +8.5V Total power dissipation (Note 1) (PDIP and SOIC) ................................................................................................... 1.0W Total power dissipation (Note 1) (SSOP) ................................................................................................................0.65W Maximum current out of VSS pin ...........................................................................................................................300 mA Maximum current into VDD pin .............................................................................................................................. 250 mA Input clamp current, IIK (VI < 0 or VI > VDD) 20 mA Output clamp current, IOK (VO < 0 or VO > VDD) 20 mA Maximum output current sunk by any I/O pin..........................................................................................................25 mA Maximum output current sourced by any I/O pin .................................................................................................... 25 mA Maximum current sunk by PORTA and PORTB (combined).................................................................................200 mA Maximum current sourced by PORTA and PORTB (combined) ........................................................................... 200 mA Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - IOH} + {(VDD-VOH) x IOH} + (VOl x IOL) 2: Voltage spikes below VSS at the MCLR/VPP pin, inducing currents greater than 80 mA, may cause latch-up. Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR/VPP pin rather than pulling this pin directly to VSS. † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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