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S29GL01GS датащи(PDF) 46 Page - SPANSION

номер детали S29GL01GS
подробное описание детали  GL-S MirrorBit짰 Eclipse??Flash Non-Volatile Memory Family
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46
GL-S MirrorBit® Family
S29GL_128S_01GS_00_06 March 16, 2012
Da ta
Sh e e t
5.6
Embedded Algorithm Performance Table
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 10,000 cycle, and a random data pattern.
3. Under worst case conditions of 90°C, VCC = 2.70V, 100,000 cycles, and a random data pattern.
4. Effective write buffer specification is based upon a 512-byte write buffer operation.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 0000h before Sector and Chip erasure.
6. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See Table 6.1, Command
Definitions on page 57 for further information on command definitions.
Table 5.4 Embedded Algorithm Characteristics (-40°C to +85°C)
Parameter
Typ (Note 2)
Max (Note 3)
Unit
Comments
Sector Erase Time 128 kbyte
275
1100
ms
Includes pre-programming prior
to erasure (Note 5)
Single Word Programming Time (Note 1)
125
400
µs
Buffer Programming Time
2-byte (Note 1)
125
750
µs
32-byte (Note 1)
160
750
64-byte (Note 1)
175
750
128-byte (Note 1)
198
750
256-byte (Note 1)
239
750
512-byte
340
750
Effective Write Buffer Program
Operation per Word
512-byte
1.33
µs
Sector Programming Time 128 kB (full Buffer
Programming)
108
192
ms
(Note 6)
Erase Suspend/Erase Resume (tESL)
40
µs
Program Suspend/Program Resume (tPSL)
40
µs
Erase Resume to next Erase Suspend (tERS)
100
µs
Minimum of 60 ns but
≥ typical
periods are needed for Erase to
progress to completion.
Program Resume to next Program Suspend (tPRS)
100
µs
Minimum of 60 ns but
≥ typical
periods are needed for Program
to progress to completion.
Blank Check
6.2
8.5
ms
NOP (Number of Program-operations, per Line)
256



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