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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S29GL01GS датащи(PDF) 3 Page - SPANSION |
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S29GL01GS датащи(HTML) 3 Page - SPANSION |
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3 / 104 page  This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient pro- duction volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid com- binations offered may occur. Publication Number S29GL_128S_01GS_00 Revision 06 Issue Date March 16, 2012 General Description The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics 65 nm MirrorBit Eclipse Technology Single supply (V CC) for read / program / erase (2.7V to 3.6V) Versatile I/O Feature – Wide I/O voltage range (VIO): 1.65V to VCC x16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Sector Erase – Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) – Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Industrial temperature range (-40°C to +85°C) 100,000 erase cycles for any sector typical 20-year data retention typical Packaging Options – 56-pin TSOP – 64-ball LAA Fortified BGA, 13 mm x 11 mm – 64-ball LAE Fortified BGA, 9 mm x 9 mm – 56-ball VBU Fortified BGA, 9 mm x 7 mm GL-S MirrorBit ® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O Data Sheet |
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