SPC56EC74L7 datasheet(72/118 Pages) STMICROELECTRONICS

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Electrical Characteristics

SPC564Bxx - SPC56ECxx

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Doc ID 17478 Rev 4

4.10.3

Flash memory start-up/switch-off timings

4.11

Electromagnetic compatibility (EMC) characteristics

Susceptibility tests are performed on a sample basis during product characterization.

4.11.1

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user apply EMC software optimization and pre-

qualification tests in relation with the EMC level requested for the application.

●

Software recommendations

− The software flowchart must include the management of

runaway conditions such as:

–

Corrupted program counter

–

Unexpected reset

–

Critical data corruption (control registers)

●

Pre-qualification trials

− Most of the common failures (unexpected reset and program

counter corruption) can be reproduced by manually forcing a low state on the reset pin

or the oscillator pins for 1 second.

To complete these trials, ESD stress can be applied directly on the device. When

unexpected behavior is detected, the software can be hardened to prevent

unrecoverable errors occurring (see application note Software Techniques For

Improving Microcontroller EMC Performance (AN1015)).

Table 31.

Start-up time/Switch-off time

Symbol

Parameter

Conditions

(1)

Value

Unit

Min

Typ

Max

TFLARSTEXIT CC D

Delay for flash memory module to exit

reset mode

Code flash

memory

—

——

125

µs

Data flash

memory

——

TFLALPEXIT

CC T

Delay for flash memory module to exit

low-power mode

Code flash

memory

——

—

0.5

TFLAPDEXIT

CC T

Delay for flash memory module to exit

power-down mode

Code flash

memory

—

——

Data flash

memory

——

TFLALPENTRY CC T

Delay for flash memory module to enter

low-power mode

Code flash

memory

——

—

0.5

VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.

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