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SPC56EC74L7 датащи(PDF) 56 Page - STMicroelectronics |
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SPC56EC74L7 датащи(HTML) 56 Page - STMicroelectronics |
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56 / 118 page ![]() Electrical Characteristics SPC564Bxx - SPC56ECxx 56/118 Doc ID 17478 Rev 4 4.6.3 I/O output DC characteristics The following tables provide DC characteristics for bidirectional pads: ● Table 15 provides weak pull figures. Both pull-up and pull-down resistances are supported. ● Table 16 provides output driver characteristics for I/O pads when in SLOW configuration. ● Table 17 provides output driver characteristics for I/O pads when in MEDIUM configuration. ● Table 18 provides output driver characteristics for I/O pads when in FAST configuration. Table 14. I/O input DC electrical characteristics Symbol C Parameter Conditions(1) Value(2) Unit Min Typ Max VIH SR P Input high level CMOS (Schmitt Trigger) —0.65VDD —VDD +0.4 V VIL SR P Input low level CMOS (Schmitt Trigger) — −0.3 — 0.35VDD VHYS CC C Input hysteresis CMOS (Schmitt Trigger) —0.1VDD —— ILKG CC P Digital input leakage No injection on adjacent pin TA = −40 °C — 2 — nA PTA = 25 °C — 2 — DTA = 105 °C — 12 500 PTA = 125 °C — 70 1000 WFI SR P Width of input pulse rejected by analog filter(3) —— — 40(4) ns WNFI SR P Width of input pulse accepted by analog filter(3) — 1000(4) —— ns 1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified. 2. VDD as mentioned in the table is VDD_HV_A/VDD_HV_B. All values need to be confirmed during device validation. 3. Analog filters are available on all wakeup lines. 4. The width of input pulse in between 40 ns to 1000 ns is indeterminate. It may pass the noise or may not depending on silicon sample to sample variation. Table 15. I/O pull-up/pull-down DC electrical characteristics Symbol C Parameter Conditions(1),(2) Value Unit Min Typ Max |IWPU|CC P Weak pull-up current absolute value VIN = VIL, VDD = 5.0 V ± 10% PAD3V5V = 0 10 — 150 µA C PAD3V5V = 1(3) 10 — 250 P VIN = VIL, VDD = 3.3 V ± 10% PAD3V5V = 1 10 — 150 |
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