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AT25DF021A-DWFHT датащи(PDF) 17 Page - Renesas Technology Corp

номер детали AT25DF021A-DWFHT
подробное описание детали  2-Mbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-I/O Support
PDF  59 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25DF021A-DWFHT датащи(HTML) 17 Page - Renesas Technology Corp

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DS-AT25DF021A-042 Rev. L
Page 17
8/7/23
© 2023 Renesas Electronics
AT25DF021A Datasheet
Figure 11. Byte Program
Figure 12. Page Program
8.2
Dual-Input Byte/Page Program
The Dual-Input Byte/Page Program command is similar to the standard Byte/Page Program command and can be
used to program anywhere from a single byte of data up to 256 bytes of data into previously erased memory
locations. Unlike the standard Byte/Page Program command, however, the Dual-Input Byte/Page Program
command allows two bits of data to be clocked into the device on every clock cycle rather than just one.
Before the Dual-Input Byte/Page Program command can be started, the Write Enable command must have been
previously issued to the device (see “Write Enable” on page 23) to set the Write Enable Latch (WEL) bit of the
Status Register to a Logical 1 state. To perform a Dual-Input Byte/Page Program command, an A2h opcode must
be clocked into the device followed by the three address bytes denoting the first location of the memory array to
begin programming at. After the address bytes have been clocked in, data can then be clocked into the device two
bits at a time on both the SO and SI pins.
The data is always input with the MSB of a byte first, and the MSB is always input on the SO pin. During the first
clock cycle, bit seven of the first data byte is input on the SO pin while bit six of the same data byte is input on the
SI pin. During the next clock cycle, bits five and four of the first data byte are input on the SO and SI pins,
respectively. The sequence continues with each byte of data being input after every four clock cycles. Like the
standard Byte/Page Program command, all data clocked into the device are stored in an internal buffer.
If the starting memory address denoted by A23-A0 does not fall on an even 256-byte page boundary (A7-A0 are
not all 0), then special circumstances regarding which memory locations are to be programmed apply. In this
situation, any data that are sent to the device that go beyond the end of the page wrap around to the beginning of
the same page. Also, if more than 256 bytes of data is sent to the device, then only the last 256 bytes sent are
latched into the internal buffer.
For example: If the starting address denoted by A23-A0 is 0000FEh and three bytes of data are sent to the device,
then the first two bytes of data are programmed at addresses 0000FEh and 0000FFh, while the last byte of data is
SCK
CS
SI
SO
MSB
MSB
23
1
0
00000010
67
5
410 11
9
812
39
37 38
33
36
35
34
31 32
29 30
OPCODE
High-Impedance
AAAA
AAA
AA
MSB
DDDDDDDD
ADDRESS BITS A23-A0
DATA IN
SCK
CS
SI
SO
MSB
MSB
23
1
0
00000010
67
5
49
839
37 38
33
36
35
34
31 32
29 30
OPCODE
High-Impedance
AA
AAA
A
MSB
DDDDDDDD
ADDRESS BITS A23-A0
DATA IN BYTE 1
MSB
DDDDDDDD
DATA IN BYTE n



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