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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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INA745AIRELR датащи(PDF) 5 Page - Texas Instruments |
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INA745AIRELR датащи(HTML) 5 Page - Texas Instruments |
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5 / 50 page  5.5 Electrical Characteristics at TA = 25 °C, VS = 3.3 V, ISENSE = 0 A, VCM = VIN– = VBUS= 12 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT CMRR Common-mode rejection –0.1 V < VCM < 40 V, TA = –40°C to +125°C A devices ±25 ±60 µA/V B devices ±0.5 ±1.25 mA/V Ios Input offset current TCT > 280 µs A devices ±0.9 ±6.25 mA B devices ±7.5 ±62.5 mA dVos/dT Input offset current drift TA = –40°C to +125°C ±5 ±30 µA/°C PSRR Input offset current vs power supply VS = 2.7 V to 5.5 V, TA = –40°C to +125°C ±0.1 ±4 mA/V Vos_bus VBUS offset voltage VBUS = 20 mV ±2 ±5 mV dVos/dT VBUS offset voltage drift TA = –40°C to +125°C A devices ±8 ±40 µV/°C B devices ±20 ±100 µV/°C PSRR VBUS offset voltage vs power supply VS = 2.7 V to 5.5 V ±1.1 ±4 mV/V DC ACCURACY GSERR System current sense gain error ISENSE = –25A to +25 A, VCM = 12 V A devices ±0.1 ±0.75 % GSERR System current sense gain error ISENSE = –25A to +25 A, VCM = 12 V B devices ±0.1 ±1.25 % GS_DRFT System current sense gain error drift –40°C ≤ TA ≤ 125°C ±75 ppm/°C GBERR VBUS voltage gain error VBUS = 0 V to 40 V A devices ±0.01 ±0.075 % VBUS = 0 V to 40 V, –40°C ≤ TA ≤ 125°C ±0.01 ±0.35 % VBUS = 0 V to 40 V B devices ±0.01 ±0.3 % VBUS = 0 V to 40 V, –40°C ≤ TA ≤ 125°C ±0.01 ±0.8 % GB_DRFT VBUS voltage gain error drift –40°C ≤ TA ≤ 125°C A devices ±25 ppm/°C B devices ±50 ppm/°C ZBUS VBUS pin input impedance Device enabled with active conversions 1 MΩ PTME Power total measurement error (TME) TA = 25°C, at full scale A devices ±0.9 % B devices ±1.6 % ETME Energy and charge TME TA = 25°C, at full scale power A devices ±1.4 % B devices ±2.1 % ADC resolution 16 Bits 1 LSB step size Current 1.2 mA Bus voltage 3.125 mV Temperature 125 m°C Power 240 µW Energy 3.84 mJ Charge 75 µC TCT ADC conversion-time(1) Conversion time field = 0h 50 µs Conversion time field = 1h 84 Conversion time field = 2h 150 Conversion time field = 3h 280 Conversion time field = 4h 540 Conversion time field = 5h 1052 Conversion time field = 6h 2074 Conversion time field = 7h 4120 INL Integral Non-Linearity Bus voltage measurement ±2 m% www.ti.com INA745A, INA745B SBOSAC3B – JULY 2023 – REVISED AUGUST 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 5 Product Folder Links: INA745A INA745B |
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