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L9969X датащи(PDF) 18 Page - STMicroelectronics

номер детали L9969X
подробное описание детали  Automotive chip for single and dual H-bridge
PDF  70 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9969X датащи(HTML) 18 Page - STMicroelectronics

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3
Functional description
3.1
Description of external interfaces
Voltage supply Vs can be connected directly to the battery voltage via a relay (for example the main relay
in an engine control system). Otherwise an additional external inverse voltage protection is necessary.
The load at the outputs is connected between both outputs (OUT1 and OUT2) in H-bridge mode.
The ASIC has two inputs controlling the current through the H-bridge: DIR controls the direction of the
current (DIR = 0 → Current flows from OUT1 → OUT2; DIR = 1 → Current flows from OUT2 → OUT1) and
PWM controls the magnitude of the current (duty cycle 0% → no current … duty cycle 100% → maximum
current).
3.2
Functional behavior in detail
All parameters are defined at (unless otherwise specified):
4.5 V < VDD < 5.5 V
VUF < VS < 28 V (power stages active)
0 V < VS < VUF (power stages inactive)
-40 °C < TJ < 150 °C
The HBR can withstand a VS of 40 V for load dump pulse (see Section 6: Load dump pulse)
It is recommended to perform the necessary adjustments at high temperature
All voltages refer to AGND
3.2.1
Power stages
L9969 provides a full H-bridge power stage, consisting of two half bridges, which are intended to be used mainly
for the control of DC motors.
The most critical loads are throttle-control actuators with the following electrical characteristics: inductance 0.8
mH to 1.0 mH, resistance 1.2 Ω to 1.8 Ω at room temperature, PWM-frequency fmin = 1 Hz and fmax = 20 kHz.
5 V < VBATT < 18 V, 4.5 V < VDD < 5.5 V, TJ= -40 °C to 150 °C, unless otherwise specified.
Table 12. Power stages parameters
Symbol
Parameter
Condition
Min Typ Max Unit
ROUT-GND Rds_ON resistance low side
IOUT = 3 A
10 V < VS < 28 V
Max. values at Tj= 150 °C
-
-
225 mΩ
ROUT-UB Rds_ON resistance high side
IOUT = 3 A
10 V < VS < 28 V
Max. values at Tj= 150 °C
-
-
315 mΩ
Ileak
OFF State leakage current H-bridge disabled by short circuit
detection; this is the current of one stage
VS = 13 V
OUTx = 0 V or VS
-200
-
200
µA
Ileak
OFF State leakage current VDD below VDD_RES
VS = 13 V
OUTx = 0 V or VS
-200
-
800
µA
3.2.2
Inverse current on VS
Inverse currents flow out of VS. An inverse current with maximum 5 A decreasing during a maximum period of 250
ms does not lead to any destruction of the H-bridge ASIC. After exposure to such an inverse current, the full
functionality of the device is guaranteed (according to the product target specification).
L9969x
Functional description
DS14029 - Rev 6
page 18/70



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