CYPAS211 datasheet(19/31 Pages) INFINEON

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Datasheet

002-37216 Rev. *B

2023-10-10

EZ-PD™ PAG2S-QZ integrated USB PD and secondary-side QR-ZVS

controller

Electrical specifications

IIL

Input leakage current

(absolute value)

–

2nA

+25°C TA, 3 V VDDD

CPIN_A

Maximum pin capacitance

Capacitance on DP,

DM pins

CPIN

All VDDD,

all other GPIOs

VOH

Output voltage HIGH level

VDDD – 0.6

–

Ioh = –4 mA

VOL

Output voltage LOW level

–

0.6

Iol = 10 mA

VIH_CMOS

Input voltage HIGH threshold

0.7 × VDDD

–

VIL_CMOS

Input voltage LOW threshold

–

0.3 × VDDD

VIH_TTL

LVTTL input

–

VIL_TTL

LVTTL input

–

0.8

VHYSTTL

Input hysteresis LVTTL

–mV

VHYSCMOS

Input hysteresis CMOS

0.1 × VDDD

IDIODE

Current through protection

diode to VDDD/VSS

–

100.0

µA

TRISEF

Rise time in Fast Strong mode

CLOAD = 25 pF

TFALLF

Fall time in Fast Strong mode

15.0

–

TRISES

Rise time in Slow Strong mode

TFALLS

Fall time in Slow Strong mode

FGPIO_OUT1

GPIO FOUT;

2.85 V  VDDD  5.5 V.

Fast Strong mode.

––

MHz

–

FGPIO_OUT2

GPIO FOUT;

2.85 V  VDDD  5.5 V.

Slow Strong mode.

FGPIO_IN

GPIO input operating

frequency;

2.85 V  VDDD  5.5 V.

Flash macro

FLASH_ERASE

Row erase time

–

15.5

–

FLASH_WRITE

Row (block) write time

(erase and program)

FLASH_DR

Flash data retention

–

Years 25°C to 55°C,

all VDDD

FLASH_ENPB

Flash write endurance

100K

Cycles

25°C to 85°C,

all VDDD

FLASH_ENPB1

Flash write endurance

10K

25°C to 125°C,

all VDDD

FLASH_ROW_PGM

Row program time after erase

–

TBULKERASE

Bulk erase time (32 KB)

TDEVPROG

Total device program time

7.5

secs

FRET1

Flash retention,

TA ≤ 55°C, 100k P/E cycles

–Years –

FRET2

Flash retention,

TA ≤ 85°C, 10k P/E cycles

FRET3

Flash retention,

TA ≤ 105°C, 10k P/E cycles

Table 5

Functional block specifications (continued)

Parameter

Description

Min

Typ

Max

Unit

Details / conditions

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