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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CYPAS211 датащи(PDF) 22 Page - Infineon Technologies AG |
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CYPAS211 датащи(HTML) 22 Page - Infineon Technologies AG |
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22 / 31 page  Datasheet 22 002-37216 Rev. *B 2023-10-10 EZ-PD™ PAG2S-QZ integrated USB PD and secondary-side QR-ZVS controller Electrical specifications UVOV VTHOV Overvoltage threshold accuracy, 4 V–30 V –3 – 3 %– VTHUV1 Undervoltage threshold accuracy, 3 V–4 V –4 4 VTHUV2 Undervoltage threshold accuracy, 4 V–30 V –3 3 VBUS gate driver DC specifications GD_VGS Gate to source overdrive during ON condition 5 – 10 V NFET driver is ON GD_Rpd Resistance when pull-down enabled –2 KΩ Applicable on VBUS_CTRL to turn-off external NFET GD_drv Programmable typical gate current 0.3 9.75 µA Gate driver output current VBUS gate driver AC specifications TON VBUS_ctrl LOW to HIGH (1 V to VBUS + 1 V) with 3 nF external capacitance 25 10 ms VBUS_IN = 5 V TOFF VBUS_ctrl HIGH to LOW (90% to 10%) with 3 nF external capacitance –7.5 – µs VBUS_IN = 28 V VBUS discharge R1 NMOS ON resistance for DS = 1 on VBUS_IN 1000 – 4000 Ω Measured at 0.5 V R2 NMOS ON resistance for DS = 2 on VBUS_IN 500 2000 R4 NMOS ON resistance for DS = 4 on VBUS_IN 250 1000 R8 NMOS ON resistance for DS = 8 on VBUS_IN 125 500 R16 NMOS ON resistance for DS = 16 on VBUS_IN 62.5 250 R32 NMOS ON resistance for DS = 32 on VBUS_IN 31.25 – 150 – Measured at 0.5 V Vbus_stop_error Error percentage of final VBUS value from setting –10 % When VBUS is discharged to 5 V R1A NMOS ON resistance for DS = 1 on VBUS_C 1000 2000 Ω Measured at 0.5 V R127A NMOS ON resistance for DS = 127 on VBUS_C 6.5 38 Voltage regulation DC specifications VOUT Typical VBUS_IN output voltage range 3.3 – 28 V – VR VBUS voltage regulation accuracy – ±3 ±5 % Ika_off Off-state cathode current 2.2 10 µA Table 5 Functional block specifications (continued) Parameter Description Min Typ Max Unit Details / conditions |
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