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TSI721 датащи(PDF) 28 Page - Renesas Technology Corp |
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TSI721 датащи(HTML) 28 Page - Renesas Technology Corp |
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28 / 67 page ![]() Tsi721 Datasheet 28 April 4, 2016 Integrated Device Technology 3.2 Recommended Operating Conditions 3.3 Power Consumption Table 13 lists the current draw for each supply group for different environmental conditions. Test characteristics were are follows: • RapidIO and PCIe links configured at operated at 5 Gbps in x4 mode • Traffic passed through the Tsi721 with a high incidence of 0/1 toggling • Power measurements are based on worst case fast silicon processing. A “Total Power” reduction in excess of 5% can be expected for nominal/typical silicon. Table 12: Recommended Operating Conditionsa a. Exposure to conditions outside the recommended operating conditions can affect the operation and/or reliability of the device. Symbol Parameter Minimum Maximum Units TA Ambient temperature – Commercial 0 70 C Ambient temperature – Industrial -40 85 C TJN Junction temperature - 110 C VDDIO 3.3V LVTTL I/O supply voltage 3.14 3.47 V 2.5V LVTTL I/O supply voltage 2.4 2.6 V VDD 1.0V Core supply voltage 0.95 1.05 V AVDD10 1.0V SerDes analog supply voltage 0.95 1.05 V AVDD25 2.5V SerDes analog supply voltage 2.25 2.75 V AVTT 1.5V SerDes transmitter analog supply voltage 1.4 1.7 V Table 13: Power Consumption Junction Temp (0C) Voltage VDD AVDD10 AVDD25 AVTT VDDIO Total Power (W) Voltage (V) Current [mA] Voltage (V) Current [mA] Voltage (V) Current [mA] Voltage (V) Current [mA] Voltage (V) Current [mA] 125 Max. 1.05 3000 1.05 330 2.75 165 1.70 350 3.47 20 4.61 Typ. 1.00 2722 1.00 281 2.50 153 1.50 335 3.30 18 3.95 Min. 0.95 2458 0.95 242 2.25 144 1.40 320 3.14 17 3.39 25 Max. 1.05 1110 1.05 214 2.75 161 1.70 350 3.47 20 2.50 Typ. 1.00 1003 1.00 190 2.50 151 1.50 335 3.30 18 2.13 Min. 0.95 909 0.95 170 2.25 142 1.40 320 3.14 17 1.85 |
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